Boron Nitride Wafer Support With AlN Layer for Corrosion Control
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Solution Overview
Problem
Conventional wafer supports made from fine ceramics like silicon nitride and aluminum nitride are difficult to process and prone to corrosion in semiconductor manufacturing processes, leading to particle generation and defects.
Innovation Solution
A wafer support is designed with a machinable ceramic base material containing boron nitride, covered by an aluminum nitride-based ceramic sintered body protective layer, where the boron nitride proportion in the base material exceeds that in the protective layer, enhancing corrosion resistance and processability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a fine ceramic material like silicon nitride or aluminum nitride is used for the wafer support, then corrosion resistance is improved, but processability deteriorates due to difficult cutting and chipping
Solution Approach 1:
The wafer support is divided into two distinct layers: a base material layer made of machinable ceramic and a surface layer made of fine ceramic. This segmentation allows each layer to optimize its function - the base material provides ease of manufacturing while the surface layer provides corrosion resistance, resolving the contradiction between processability and reliability
Solution Approach 2:
The invention uses a composite structure combining machinable ceramic (base material) with fine ceramic (surface layer). This composite approach integrates the advantages of both materials - the machinability of the base material and the corrosion resistance of the fine ceramic surface layer - thereby resolving the technical contradiction between ease of manufacture and reliability
2Reliability
If an aluminum nitride film is applied to cover the machinable ceramic base material, then corrosion resistance is improved, but particle generation increases due to pinholes and minute defects in the film
Solution Approach 1:
Instead of using a thin aluminum nitride film that is prone to pinholes and defects, the invention employs a thick surface layer made of sintered aluminum nitride ceramic. This thick layer structure eliminates the film defect issues while maintaining corrosion resistance, thereby reducing particle generation
Solution Approach 2:
The invention changes the thickness parameter of the aluminum nitride layer from a thin film configuration to a thick sintered body configuration. This parameter change eliminates pinholes and minute defects that cause particle generation, while still providing the desired corrosion resistance through the aluminum nitride material composition
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design reduces corrosion of the base material by plasma and process gases, minimizing particle generation and extending the life of the wafer support, thus improving the reliability of semiconductor manufacturing processes.
Implementation Method 1
a first layer covering a surface of the base material. The first layer is made of an aluminum nitride-based ceramic sintered body... reduces corrosion of the base material by plasma and process gases
Implementation Method 2
a base material made of a machinable ceramic including boron nitride... a machinable ceramic excellent in processability
Data Source
AI summary
A wafer support includes a base material made of a machinable ceramic including boron nitride; a first layer covering the base material; and a conductive member placed at least partially inside the base material. The first layer is made of an aluminum nitride-based ceramic sintered body, and the proportion of boron nitride included in the base material is higher than the proportion of boron nitride included in the first layer.