Wafer Support Pin Flat Rounded Front End Annealing
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Solution Overview
Problem
Conventional wafer support pins are insufficient for larger wafers, leading to increased gravitational stress and slip dislocation during high-temperature rapid thermal annealing, which can result in surface defects and reduced yield in semiconductor manufacturing.
Innovation Solution
A wafer support pin with a flat or rounded front end, made of quartz or monocrystalline/polycrystalline silicon, and optionally doped with N or C, and coated with SiC or Si3N4, to minimize gravitational stress and heat loss, with a controlled contact area to prevent slip dislocation, and an intermediate stabilization step during annealing to reduce thermal stress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If the contact area between pin and wafer is minimized, then thermal stress is reduced, but gravitational stress concentration increases causing slip dislocation
Solution Approach 1:
The support pin geometry is optimized with a flat or rounded front end to increase contact area for gravitational load distribution, while maintaining minimal overall contact to reduce heat loss during rapid thermal annealing. This local differentiation resolves the contradiction between heat loss and slip control.
2Productivity
If high temperature rapid thermal annealing is used to form denuded zone and BMD, then productivity increases due to short process time, but slip dislocation occurs on wafer surface
Solution Approach 1:
The support pin is pre-designed with a flat or rounded front end geometry that distributes gravitational stress before the rapid thermal annealing process begins. This preliminary structural preparation prevents slip dislocation during the high-temperature process, maintaining surface quality while achieving high productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces gravitational stress and thermal stress, achieving a slip-free wafer surface and improving the quality of annealed wafers by distributing load and reducing thermal expansion mismatch, while maintaining productivity.
Implementation Method 1
a front end of the wafer support pin, contacted with the wafer, is flat or rounded to minimize gravitational stress during annealing the wafer
Implementation Method 2
minimize thermal stress caused by heat loss and deviation of thermal expansion coefficient according to the material difference of silicon and quartz
Implementation Method 3
minimize heat loss
Implementation Method 4
an annealing process is generally carried during a semiconductor device manufacturing procedure
Implementation Method 5
the rapid thermal annealing process employs a method of balancing the center of gravity of a wafer on a 0.7 R inner 3-point support points
Data Source
AI summary
A wafer support pin has a front end contacted with a wafer such that the front end is flat or rounded. Thus, gravitational stress is minimized during annealing the wafer, thereby minimizing slip dislocation. This wafer support pin is suitably used for annealing of a wafer, particularly high temperature rapid thermal annealing of a large-diameter wafer.


