Wafer Support Plate Thermal Stability Design

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Solution Overview

Problem

In semiconductor manufacturing, wafer support structures fail to maintain thermal stability during transportation, leading to changes in metal film shape and quality due to low thermal conductivity in high-vacuum environments, and existing structures are prone to wafer damage from pressure differences.

Innovation Solution

A wafer support plate with a flat portion and an outer circumferential protruding portion, featuring a perforated support portion and an annular support portion, which forms a closed space with the chamber inner wall to maintain thermal stability and prevent wafer damage, using heat-resistant materials like stainless steel or titanium alloys.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional wafer support structure without backside support is used, then the structure is simple, but the wafer is prone to damage from pressure differences and cannot maintain thermal stability

Engineering Contradiction:
Improvewafer damage preventionVSAvoidsupport structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The wafer support structure is segmented into multiple functional components: a support table with through-holes for gas introduction, a separate cover plate with protruding portions that contact the wafer backside, and peripheral sealing structures. This segmentation allows each component to perform its specific function (mechanical support, thermal transfer, pressure equalization) while collectively preventing wafer damage and maintaining thermal stability during transportation.

Inventive Principle:
Principle #1Segmentation

2Manufacturing precision

If the wafer is transported in high vacuum without thermal management, then the vacuum environment is maintained, but the metal film thermal history extends and film quality deteriorates

Engineering Contradiction:
Improvemetal film qualityVSAvoidthermal history extension time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

A gas introduction system using the wafer support structure as an intermediary medium is employed. Gas is introduced through the support table and cover plate to facilitate thermal management of the metal film during transportation, allowing heat dissipation or maintenance without direct contact with the film surface, thus preserving film quality while controlling thermal history.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The system maintains an inert gas atmosphere during wafer transportation to prevent oxidation of the metal film while enabling thermal management. The gas environment protects the film from chemical degradation while allowing controlled heat transfer through the wafer backside, resolving the contradiction between maintaining vacuum for film stability and enabling thermal control.

Inventive Principle:
Principle #39Inert atmosphere (Inert environment)

3Volume of stationary object

If a wafer support structure with minimal protruding portion is used, then the closed space formation is difficult, but the structure remains simple

Engineering Contradiction:
Improveclosed space volumeVSAvoidsupport structure complexity
Core Design Contradiction:
Volume of stationary objectVSDevice complexity

Solution Approach 1:

The cover plate is designed with protruding portions that extend vertically toward the wafer backside, creating a three-dimensional configuration that forms a closed space between the support table, cover plate, and wafer peripheral regions. This dimensional approach efficiently creates the required enclosed volume without requiring complex lateral extensions or additional components.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively maintains the thermal history of metal films, prevents wafer damage, and enhances cooling efficiency by forming a closed space for gas introduction, thereby improving the quality and durability of metal films.

Implementation Method 1

In high vacuum, thermal conductivity is low, and a film-formed wafer is substantially maintained at the temperature at the time of film formation

Methodology Applied
Scientific EffectThermal insulation: Thermal Insulation

Implementation Method 2

a force applied when a pressure difference occurs between the front side and the back side of the wafer can be concentrated on the outer circumferential portion of the wafer

Methodology Applied
Scientific EffectPressure distribution: Pascal's Law

Data Source

PatentUS20240068100A1Wafer support plate and semiconductor manufacturing apparatus including same
Publication Date: 2024.02.29 UNITED SEMICON JAPAN CO LTD
  • US20240068100A1 patent drawing
  • US20240068100A1 patent drawing
  • US20240068100A1 patent drawing

AI summary

A wafer support member that can move in the same chamber after a film has been formed on a wafer and enable processing of the film-formed wafer and a semiconductor manufacturing apparatus including the wafer support member are provided. The wafer support plate 10 includes a flat portion 1 configured to support a wafer W and an outer circumferential protruding portion 2, being disposed in a surrounding shape on an outer circumference of the flat portion 1 and being formed with a larger thickness than the wafer W. The flat portion 1 includes a perforated support portion 1A and an annular support portion 1B. The annular support portion 1B is disposed outside of the perforated support portion 1A and supports an outer circumferential end portion Wo of the wafer W.