Ceramic Wafer Support Plug Layout for Plasma Discharge Suppression

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing semiconductor manufacturing equipment members experience electrical discharge during wafer processing, particularly in deep etching with high-power plasma, despite conventional discharge suppression techniques.

Innovation Solution

A member for semiconductor manufacturing equipment featuring a ceramic substrate with embedded plugs composed of a dense body, where the plug's upper and lower end surfaces and gas passage dimensions are optimized to minimize discharge, with specific height ratios and fracture toughness enhancements.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional plugs are used in gas passage portions, then discharge suppression is achieved, but discharge still occurs during deep etching with high-power plasma

Engineering Contradiction:
Improvedischarge suppressionVSAvoidelectrical discharge during high-power plasma processing
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The plug is designed with a specific geometric configuration where the distance from the upper end opening to the gas passage surface (D1) is controlled to be 0.05 to 0.5 times the distance from the lower end opening to the gas passage surface (D2). This local geometric optimization creates different electrical field distribution characteristics in different regions of the plug, effectively suppressing discharge during high-power plasma processing while maintaining gas flow efficiency.

Inventive Principle:
Principle #3Local quality

2Reliability

If the plug geometry is optimized to suppress discharge, then discharge suppression is improved, but gas flow efficiency may be compromised

Engineering Contradiction:
Improvedischarge suppressionVSAvoidgas flow efficiency
Core Design Contradiction:
ReliabilityVSProductivity

Solution Approach 1:

The invention optimizes the geometric parameters of the plug, specifically controlling the ratio D1/D2 to be within 0.05 to 0.5. This parameter optimization simultaneously achieves effective discharge suppression and maintains adequate gas flow efficiency by balancing the electrical field distribution and gas flow resistance in the plug structure.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The optimized plug design effectively suppresses electrical discharge between the wafer and base plate, enhancing discharge suppression beyond conventional methods while maintaining gas flow efficiency.

Implementation Method 1

cooling gas such as helium gas is introduced into the back surface of the wafer through a gas passage portion

Methodology Applied
Scientific EffectGas flow:

Implementation Method 2

it suppresses the discharge because the electrons hit the plug before colliding with other gas molecules

Methodology Applied
Scientific EffectElectrical discharge suppression:

Data Source

PatentUS20250273507A1Member for semiconductor manufacturing equipment
Publication Date: 2025.08.28 NGK INSULATORS LTD
  • US20250273507A1 patent drawing
  • US20250273507A1 patent drawing
  • US20250273507A1 patent drawing

AI summary

A member for a semiconductor manufacturing equipment that uses a discharge suppression technology different from conventional ones is provided. A member for a semiconductor manufacturing equipment includes: a ceramic substrate having an upper surface on which a wafer is to be placed and a lower surface; a plug placement hole that vertically penetrates the ceramic substrate; and a plug embedded in the plug placement hole; wherein the plug is composed of a dense body, including an upper end surface exposed on a side of the upper surface, a lower end surface exposed on a side of the lower surface, and a gas passage; and wherein a maximum height D1 in the vertical direction from the upper end opening to a surface of the gas passage, and a maximum height D2 from the lower end opening to the surface of the gas passage satisfies a relationship: D1<D2.