Wafer Support Apparatus Thermal Breaks for Void-Free Gap Fill
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Solution Overview
Problem
Existing semiconductor processing technologies face challenges in filling high aspect ratio gaps with insulating material due to limitations in deposition processes, particularly as device geometries shrink and thermal budgets are reduced, leading to difficulties in achieving void-free filling of narrow width, high aspect ratio features.
Innovation Solution
A wafer support apparatus with a chuck and housing configuration that minimizes thermal contact and includes thermal break regions, along with a dielectric break, to maintain precise temperature control and support wafers during flowable dielectric gap fill processes, ensuring effective deposition of insulating materials in high aspect ratio features.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition processes are used to fill high aspect ratio gaps, then the deposition process can be performed with standard equipment, but void-free filling becomes increasingly difficult as device geometries shrink and aspect ratios increase
Solution Approach 1:
The patent changes the temperature parameter by maintaining the chuck at a lower temperature than the housing through thermal breaks, creating a temperature gradient that prevents condensation on the chuck while allowing deposition elsewhere. This parameter change enables void-free filling of high aspect ratio gaps by controlling where material deposits.
Solution Approach 2:
The patent applies local quality by creating different thermal zones within the same chamber - the housing and its surfaces are allowed to warm up while the chuck remains cooler. This local temperature differentiation controls the deposition pattern to achieve complete gap filling without voids.
2Manufacturing precision
If the chuck is in direct thermal contact with the housing, then thermal management is simplified, but condensation of reactants occurs on the chuck surface preventing effective deposition
Solution Approach 1:
The patent segments the thermal path between the housing and chuck by introducing thermal breaks - insulating structures that divide the continuous thermal contact into separate zones. This segmentation allows independent temperature control of the chuck versus the housing, preventing condensation on the chuck surface while maintaining simplified overall thermal management.
Solution Approach 2:
The patent introduces thermal break materials as intermediary elements between the housing and chuck. These intermediaries block unwanted heat transfer to the chuck, preventing reactant condensation while allowing the housing to maintain its thermal state for effective deposition.
3Ease of operation
If thermal contact between chuck and housing is increased, then temperature control is easier, but unwanted thermal conduction causes condensation of reactants on the chuck
Solution Approach 1:
The patent segments the thermal conduction path using thermal breaks that divide the heat flow into controlled zones. This segmentation maintains easy temperature control through the housing while preventing unwanted thermal conduction to the chuck that would cause condensation and deposit failures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables efficient and void-free filling of high aspect ratio gaps with insulating materials, improving the reliability and precision of semiconductor fabrication by maintaining optimal thermal conditions and preventing unwanted thermal contact, thus enhancing the quality of semiconductor devices.
Implementation Method 1
The first thermal break region may stop short of extending all the way towards the center of the housing floor. There may be no substantial thermal contact between the bottom surface and the housing floor across the first thermal break region.
Implementation Method 2
The dielectric floor may include a second thermal break region extending from the outer dielectric wall towards the center of the dielectric floor. There may be no substantial thermal contact between the outer wall, the outer dielectric wall, and the outer surface, no substantial thermal contact between the bottom surface and the dielectric floor across the second thermal break region.
Data Source
AI summary
Electronic device fabrication processes, apparatuses and systems for flowable gap fill or flowable deposition techniques are described. In some implementations, a semiconductor fabrication chamber is described which is configured to maintain a semiconductor wafer at a temperature near 0° C. while maintaining most other components within the fabrication chamber at temperatures on the order of 5-10° C. or higher than the wafer temperature.