Wafer Placement Table Cooling Around Terminal and Lift Pin Holes

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Solution Overview

Problem

Existing wafer placement tables experience low heat dissipation performance around terminal holes, gas holes, and lift pin holes, leading to hot spots on the wafer surface.

Innovation Solution

Incorporating a heat exchange promoting portion around these holes with a narrower refrigerant flow channel, fins, and increased ceramic coverage to enhance heat exchange between the refrigerant and the wafer, reducing thermal resistance and promoting heat dissipation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If holes (terminal hole, gas holes, lift pin holes) are provided in the wafer placement table, then functionality for power supply, gas supply, and wafer handling is improved, but heat dissipation performance deteriorates causing hot spots

Engineering Contradiction:
ImprovefunctionalityVSAvoidheat dissipation performance
Core Design Contradiction:
Adaptability or versatilityVSTemperature

Solution Approach 1:

The refrigerant flow channel is designed with different widths in different regions: a first width in the first region (around holes) and a second width in the second region (away from holes). This local differentiation allows optimized heat dissipation in critical areas while maintaining overall system functionality.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The width of the refrigerant flow channel is changed as a design parameter to control refrigerant flow rate distribution. By making the channel narrower in the first region, the refrigerant flow rate increases locally, enhancing heat exchange efficiency in areas prone to hot spots.

Inventive Principle:
Principle #35Parameter changes

2Temperature

If the refrigerant flow channel is narrowed in the heat exchange promoting portion, then heat dissipation is improved, but refrigerant flow resistance increases

Engineering Contradiction:
Improveheat dissipationVSAvoidflow resistance
Core Design Contradiction:
TemperatureVSStress or pressure

Solution Approach 1:

The refrigerant flow channel width is locally adjusted rather than uniformly changed. The channel has a first width in regions requiring enhanced heat dissipation and a second width in other regions, allowing localized optimization without system-wide flow resistance increase.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The channel narrowing is applied partially only in specific regions where hot spots occur, rather than throughout the entire channel. This partial action provides sufficient heat dissipation enhancement in critical areas while avoiding excessive flow resistance increase.

Inventive Principle:
Principle #16Partial or excessive action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces the occurrence of hot spots by increasing heat dissipation around the holes, ensuring efficient cooling of the wafer during processes like CVD and etching.

Implementation Method 1

heat exchange between refrigerant flowing through the refrigerant flow channel and a wafer placed on the wafer placement surface

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

refrigerant flowing through a part where the refrigerant flow channel is narrow flows at a higher flow rate

Methodology Applied
Scientific EffectConvection: Convection

Implementation Method 3

refrigerant flowing through a part where the refrigerant flow channel is narrow flows at a higher flow rate than refrigerant flowing through a part where the refrigerant flow channel is not narrow

Methodology Applied
Scientific EffectFluid flow:

Implementation Method 4

Refrigerant flowing through the part of the refrigerant flow channel where the fin is provided is more likely to be turbulent flow

Methodology Applied
Scientific EffectTurbulent flow: Turbulence

Data Source

PatentUS12131891B2Wafer placement table
Publication Date: 2024.10.29 NGK INSULATORS LTD
  • US12131891B2 patent drawing
  • US12131891B2 patent drawing
  • US12131891B2 patent drawing

AI summary

A wafer placement table includes a ceramic base having a wafer placement surface on its top surface where a wafer is able to be placed and incorporating an electrode, a cooling base bonded to a bottom surface of the ceramic base and having a refrigerant flow channel, a plurality of holes extending through the cooling base in an up and down direction, and a heat exchange promoting portion that is provided in an area around at least one of the plurality of holes and that promotes heat exchange between refrigerant flowing through the refrigerant flow channel and a wafer placed on the wafer placement surface.