Semiconductor Wafer Tape Masking for Warp-Free Plating
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Solution Overview
Problem
Conventional methods of manufacturing semiconductor devices face issues with warping and poor external appearance due to air bubbles and adhesive residue during plating treatments, particularly in large diameter wafers, leading to potential damage and foreign matter formation.
Innovation Solution
A method involving the application of a back surface protective tape with a roughened surface and a perimeter tape to cover the semiconductor wafer, followed by a plating treatment, which enhances adhesion and prevents plating solution entry, thereby reducing warping and adhesive residue.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional plating treatment is performed on large diameter semiconductor wafers, then the wafer surface is treated, but warping occurs and external appearance deteriorates due to air bubbles and adhesive residue
Solution Approach 1:
The patent divides the protective tape application into two distinct segments: a back surface protective tape covering the entire back surface, and a perimeter protective tape covering only the outer peripheral portion and side surface. This segmentation allows each tape to serve its specific function - the back surface tape prevents warping during plating, while the perimeter tape prevents plating solution entry at edges, thereby resolving the warping issue while maintaining wafer integrity
Solution Approach 2:
The patent applies protective tapes to the semiconductor wafer before performing the plating treatment. By preparing the wafer surface with appropriate protective coverage in advance, the plating process can be completed without causing warping or adhesive residue issues, as the tapes are specifically positioned to prevent these problems during the subsequent plating operation
2Stability of the object's composition
If protective tape is applied to prevent warping, then wafer stability improves, but plating solution may enter through air bubbles causing foreign matter formation
Solution Approach 1:
The patent segments the protective coverage into two areas: the back surface protective tape that maintains wafer stability during plating, and the perimeter protective tape that specifically seals the outer edges and side surfaces to prevent plating solution entry. This dual-tape approach ensures that the back surface remains stable while the perimeter is sealed against foreign matter contamination
Solution Approach 2:
The perimeter protective tape acts as an intermediary barrier between the plating solution and the wafer's outer peripheral regions. By positioning this tape to cover the side surface and outer edges, it mediates the interaction between the plating solution and wafer structure, preventing solution entry that would cause foreign matter formation while allowing the plating process to proceed on the front surface
3Stability of the object's composition
If the entire back surface is covered with protective tape, then warping is reduced, but adhesive residue damages the wafer after peeling
Solution Approach 1:
The patent segments the protective tape application area, using a back surface protective tape that covers the entire back surface for warping control, and a separate perimeter protective tape for edge sealing. The back surface tape is designed to be peeled off after plating without leaving damaging residue, while the perimeter tape provides additional protection at critical edges. This segmentation allows the use of tape materials and adhesion characteristics optimized for warping prevention that can be cleanly removed
Solution Approach 2:
The back surface protective tape is designed as a disposable element that serves its purpose during the plating process and is then removed. The tape material is selected to provide sufficient adhesion for warping control during plating, but to peel off cleanly afterward without leaving damaging residue on the wafer surface, effectively serving as a temporary protective measure
4Stability of the object's composition
If the outer peripheral portion is left thick in a rib-like shape to prevent warping, then wafer stability improves, but plating solution entry at edges causes poor external appearance
Solution Approach 1:
The perimeter protective tape serves as an intermediary barrier that seals the outer peripheral portion and side surface of the wafer. This tape prevents plating solution from entering the rib-like thickened edge regions, thereby preventing foreign matter formation and poor external appearance while allowing the rib structure to continue providing warping prevention functionality
Solution Approach 2:
The perimeter protective tape functions as a flexible sealing film that conforms to the rib-like shape of the outer peripheral portion. This thin film barrier effectively seals the edges and prevents plating solution penetration into the thickened edge regions, maintaining both the structural integrity provided by the rib shape and the external appearance by preventing contamination
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively reduces warping and improves the external appearance of semiconductor devices by minimizing plating solution entry and adhesive residue, ensuring smooth peeling and maintaining wafer integrity.
Implementation Method 1
applying a second tape to an outer peripheral portion of the semiconductor wafer, so as to cover the portion of the surface of the first tape, at which the roughness is formed
Implementation Method 2
heating the semiconductor wafer after the first tape and the second tape are applied
Implementation Method 3
forming a plated film at the surface of the first electrode by a plating treatment
Data Source
AI summary
A method of manufacturing a semiconductor device having first and second main surfaces opposite to each other. The method includes: forming a first electrode at the first main surface of the semiconductor wafer; applying a first tape to the second main surface of the semiconductor wafer; forming roughness at a portion of a surface of the first tape; applying a second tape to an outer peripheral portion of the semiconductor wafer, so as to cover the portion of the surface of the first tape, with the roughness formed thereon, at the second main surface of the semiconductor wafer, to cover a portion of the first main surface of the semiconductor wafer, and to cover a side surface of the semiconductor wafer; heating the semiconductor wafer after the first and second tapes are applied; and subsequently forming a plated film at the surface of the first electrode by a plating treatment.