Wafer Temperature Correction in Ion Implantation
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Solution Overview
Problem
Ion implantation devices lack continuous monitoring and correction of wafer temperature, leading to potential heat exchange inefficiencies and product defects due to adherence issues or contamination, which can result in device characteristic degradation.
Innovation Solution
An ion implantation device equipped with a noncontact temperature detection system using an infrared sensor to monitor and correct the substrate temperature in real time, featuring a control mechanism that adjusts the ion radiation and cooling medium supply based on detected temperature information to maintain a permissible temperature range.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If cooling systems are used to maintain wafer temperature, then temperature control is improved, but the system cannot detect actual temperature variations caused by pedestal deterioration or contamination
Solution Approach 1:
The patent implements an infrared detection system that continuously monitors wafer temperature and provides feedback to a control unit. The control unit compares detected temperature with the set temperature and adjusts the cooling medium supply accordingly. This closed-loop feedback mechanism enables real-time detection of temperature variations caused by pedestal deterioration or contamination, allowing the system to maintain reliable temperature control despite such issues.
Solution Approach 2:
The patent replaces contact-based temperature measurement methods with non-contact infrared detection. The infrared detection unit measures wafer temperature remotely without physical contact, eliminating the need for thermal coupling between the measurement system and the wafer. This substitution allows accurate temperature monitoring even when pedestal conditions deteriorate or contamination occurs at contact interfaces.
2Measurement precision
If noncontact temperature detection is implemented, then continuous monitoring capability is improved, but device complexity increases due to additional detection and control systems
Solution Approach 1:
The control unit serves multiple functions: it receives temperature information from the infrared detection unit, compares it with the set temperature, determines temperature deviations, and controls the cooling medium supply. By consolidating these functions in a single control unit, the patent achieves continuous temperature monitoring without proportionally increasing system complexity. The infrared detection unit is integrated into the existing ion implantation device structure, sharing space and control infrastructure where possible.
3Temperature
If cooling medium supply is increased to compensate for heat exchange inefficiency, then temperature control is maintained, but energy consumption increases
Solution Approach 1:
The patent implements dynamic control of the cooling medium supply based on real-time temperature measurements. The control unit continuously adjusts the cooling medium flow rate according to the detected temperature deviation from the set point. When temperature control is efficient, less cooling medium is required; when efficiency decreases due to pedestal deterioration or contamination, the system dynamically increases cooling medium supply only to the extent necessary to maintain temperature stability. This dynamic adjustment prevents excessive energy consumption while maintaining temperature control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables continuous monitoring and correction of wafer temperature, reducing variations in semiconductor device manufacturing and improving yield rates by ensuring heat exchange efficiency and preventing product defects.
Implementation Method 1
temperature information detection unit that detects temperature information for a substrate in a noncontact state
Implementation Method 2
cooling medium supply unit that supplies a cooling medium to the substrate retention unit and enables heat exchange for the substrate
Data Source
AI summary
To provide an ion implantation device capable of correcting the temperature of the wafer. The ion implantation device of the present invention has: an irradiation means that radiates ions; a retention means that includes a disk 112 that retains at least one wafer W; a thermopile 122 that detects, in a noncontact manner, temperature information for a wafer W retained on disk 112; a cooling medium supply unit that enables heat exchange for a wafer W retained on disk 112; and a control unit that calculates the surface temperature of a wafer W retained on disk 112 based on the temperature information detected by thermopile 122 and that determines whether the calculated surface temperature for the wafer is within a permissible temperature range.