Wafer Temperature Control Using Heater-Lamp Lookup Tables

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Solution Overview

Problem

Existing substrate processing apparatuses face challenges in accurately controlling wafer temperatures during semiconductor manufacturing, leading to potential setting errors and risks of wafer warping or breakage due to incorrect temperature settings.

Innovation Solution

A substrate processing apparatus equipped with a controller that utilizes a temperature control table to set and control the heater and lamp values based on a designated target wafer temperature, reducing setting errors by associating specific temperature control values with the heater and lamp settings.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If manual setting of temperature control values is used, then operator flexibility is maintained, but setting errors occur leading to wafer warping or breakage

Engineering Contradiction:
Improvetemperature control accuracyVSAvoidsetting complexity
Core Design Contradiction:
ReliabilityVSEase of operation

Solution Approach 1:

The system pre-calculates and stores optimal temperature control values (heater temperature, lamp temperature, power supply power) for each wafer temperature setting in a lookup table before operation. During actual processing, the operator only needs to input the desired wafer temperature, and the system automatically retrieves the pre-calculated control parameters, eliminating manual calculation errors and reducing setting complexity.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

A controller acts as an intermediary between the operator's simple temperature input and the complex multi-parameter temperature control system. The controller automatically converts the desired wafer temperature into appropriate control values for the heater, lamp, and power supply based on stored relationships, shielding the operator from complexity while ensuring accurate temperature control.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Manufacturing precision

If multiple temperature control parameters are manually adjusted, then fine-grained control is possible, but setting errors and wafer damage risk increase

Engineering Contradiction:
Improvewafer temperature control precisionVSAvoidcontrol parameter quantity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The optimal relationships between wafer temperature and multiple control parameters (heater temperature, lamp temperature, power supply power) are pre-calculated and stored in a lookup table. This eliminates the need for operators to manually adjust multiple parameters while maintaining precise temperature control, as the system automatically retrieves the correct combination of parameters for each desired wafer temperature.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The system changes the control approach from manually adjusting multiple physical parameters to selecting a single target parameter (wafer temperature). The controller then automatically determines the appropriate values for multiple control parameters based on pre-stored relationships, reducing operational complexity while maintaining manufacturing precision.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for precise temperature control of the wafer, reducing the risk of warping and breakage by accurately setting and maintaining the target temperature, thereby improving the reliability of the semiconductor manufacturing process.

Implementation Method 1

a heater configured to heat a substrate

Methodology Applied
Scientific EffectResistive heating: Joule Heating

Implementation Method 2

a lamp configured to heat the substrate

Methodology Applied
Scientific EffectThermal radiation: Thermal Radiation

Data Source

PatentUS20240006206A1Processing apparatus, recording medium, and method of manufacturing semiconductor device
Publication Date: 2024.01.04 KOKUSAI DENKI KK
  • US20240006206A1 patent drawing
  • US20240006206A1 patent drawing
  • US20240006206A1 patent drawing

AI summary

There is provided a technique that includes: a storage storing at least a temperature control table where a set value of a heater heating a substrate and a set value of a lamp heating the substrate are set for a target temperature of the substrate, and a process recipe constituted by steps of processing the substrate; and a controller capable of performing a control of executing the process recipe, wherein the controller is capable of performing a control of: searching the temperature control table with target temperature corresponding to a substrate temperature set in the process recipe; and setting a set value for the target temperature corresponding to the substrate temperature to at least one selected from the group of a temperature set value of the heater, a temperature ratio of the heater, a power set value of the lamp, and a lamp rate value in the process recipe.