Semiconductor Wafer Temperature Control for Accurate Mass Metrology
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Solution Overview
Problem
Temperature variations between semiconductor wafers and measurement apparatus cause significant errors in high-accuracy mass measurements, reducing throughput and productivity in semiconductor processing.
Innovation Solution
Control cooling or heating of semiconductor wafers based on their incoming temperature to optimize the cooling or heating process, allowing for faster temperature equalization to a predetermined level, thereby improving throughput and productivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If semiconductor wafers are cooled or heated to a predetermined temperature before processing, then measurement accuracy and processing quality are improved, but processing time increases and throughput decreases
Solution Approach 1:
The patent implements dynamic temperature control by continuously monitoring wafer temperature and adjusting cooling/heating duration in real-time. The system transitions from static fixed-duration thermal treatment to dynamic adaptive thermal treatment, where the processing time is continuously optimized based on actual temperature feedback, thereby improving both measurement accuracy and throughput simultaneously
Solution Approach 2:
The patent employs feedback control mechanisms where temperature sensors monitor wafer temperature during thermal treatment, and the control system adjusts cooling/heating parameters based on this feedback. This closed-loop control ensures precise temperature equalization while minimizing unnecessary processing time, resolving the contradiction between measurement precision and productivity
2Stability of the object's composition
If fixed duration cooling or heating is applied to all wafers, then temperature equalization is achieved, but unnecessary cooling or heating time is wasted reducing throughput
Solution Approach 1:
The system dynamically adjusts thermal treatment duration for each wafer based on its initial temperature. Wafers requiring less thermal treatment receive shorter processing times, while those needing more treatment receive extended times. This dynamic approach maintains temperature uniformity across all wafers while minimizing total processing time and maximizing throughput
Solution Approach 2:
The patent changes the parameter of thermal treatment duration from a fixed constant to a variable parameter that adapts to each wafer's thermal state. By modifying this key parameter dynamically, the system achieves temperature equalization with optimal time efficiency, eliminating unnecessary cooling or heating cycles
3Measurement precision
If high accuracy mass measurement is performed, then measurement resolution is improved, but temperature control requirements increase causing system complexity
Solution Approach 1:
The patent introduces thermal transfer plates as intermediary elements between the wafer and the measurement/environment. These plates act as thermal mediators that facilitate controlled heat transfer and temperature equalization. By using these intermediary components, the system achieves precise temperature control required for high-accuracy measurements without directly complicating the measurement apparatus itself
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances the throughput and productivity of semiconductor processing by minimizing unnecessary cooling or heating times based on wafer temperature, ensuring accurate temperature control before processing.
Implementation Method 1
a cooling or heating part for cooling or heating the semiconductor wafer
Implementation Method 2
detecting information relating to the temperature of the semiconductor wafer
Data Source
AI summary
A semiconductor wafer mass metrology method comprising: controlling the temperature of a semiconductor wafer by: detecting information relating to the temperature of the semiconductor wafer; and controlling cooling or heating of the semiconductor wafer based on the detected information relating to the temperature of the semiconductor wafer; wherein controlling the cooling or heating of the semiconductor wafer comprises controlling a duration of the cooling or heating of the semiconductor wafer; and subsequently loading the semiconductor wafer onto a measurement area of a semiconductor wafer mass metrology apparatus.