Semiconductor Wafer Thinning for Efficient Chip Separation

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Current semiconductor manufacturing methods face inefficiencies in separating chip regions from semiconductor wafers due to the need to remove ring-shaped convex portions, which reduces the effective area of the device region and degrades manufacturing efficiency.

Innovation Solution

A manufacturing method where one surface of the semiconductor wafer is ground to create a thinner first part surrounded by a thicker second part, with a bonding surface of a tape attached to the opposite surface, allowing for precise separation using a rotary blade while minimizing warpage and deformation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If the ring-shaped convex portion is removed before separating chip regions, then the chip regions can be separated, but the effective area of the device region is reduced

Engineering Contradiction:
Improveease of separationVSAvoideffective area of device region
Core Design Contradiction:
Ease of manufactureVSArea of stationary object

Solution Approach 1:

The invention applies preliminary action by performing selective thinning of the first part (device region) before the separation process. This prepares the structure in advance so that during separation, the thinner first part can be cleanly detached from the second part without requiring removal of a ring-shaped convex portion, thereby preserving the effective area while enabling easy separation.

Inventive Principle:
Principle #10Preliminary action

2Manufacturing precision

If the semiconductor wafer is processed with high accuracy to suppress warpage and deformation, then manufacturing precision is improved, but the separation process becomes more difficult

Engineering Contradiction:
Improvesuppression of warpage and deformationVSAvoidease of separation
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The invention applies local quality by creating a thickness difference between different parts of the semiconductor wafer. The first part (device region) is selectively thinned to a smaller thickness than the second part (peripheral region). This local variation in thickness allows the thinned first part to be easily separated while the thicker second part maintains structural integrity and suppresses warpage and deformation during processing.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach improves manufacturing efficiency by maximizing the effective area of the device region and reducing warpage and deformation during the separation process.

Implementation Method 1

cutting apart of the first part with a rotary blade in contact with the one surface side of the first part

Methodology Applied
Scientific EffectMechanical cutting: Friction

Implementation Method 2

a bonding surface of a first tape is attached to a surface opposite to the one surface of the semiconductor wafer

Methodology Applied
Scientific EffectAdhesion: Adhesive

Implementation Method 3

one surface of a semiconductor wafer is ground such that a first part is to be thinner than a second part surrounding the first part

Methodology Applied
Scientific EffectGrinding: Abrasion

Data Source

PatentUS10395967B2Method for manufacturing semiconductor device
Publication Date: 2019.08.27 RENESAS ELECTRONICS CORP
  • US10395967B2 patent drawing
  • US10395967B2 patent drawing
  • US10395967B2 patent drawing

AI summary

Provided is a method of manufacturing a semiconductor device with improved manufacturing efficiency for the semiconductor device. The method of manufacturing a semiconductor device includes the steps of: (a) forming a circuit at a front surface side of a wafer (semiconductor wafer) having the front surface and a back surface opposite to the front surface; (b) grinding the back surface of the wafer that has a center part (first part) and a peripheral edge part (second part) surrounding a periphery of the center part in such a manner that the center part is thinner than the peripheral edge part; (c) attaching an upper surface (bonding surface) of a holding tape to the front surface of the wafer; and (d) separating the center part from the peripheral edge part by cutting a part of the center part with a blade (rotary blade) while the wafer is held by the first tape.