Wafer Transfer Finger Heating for Warp-Free Semiconductor Handling

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Solution Overview

Problem

Wafers experience warping due to large temperature differences between the adsorption plate of the manipulator and the wafer, which affects product quality.

Innovation Solution

A transfer device equipped with an adsorption finger, heating element, first and second temperature measurement elements, and a control element to manage temperature differences by heating the adsorption member when necessary to maintain a preset temperature difference with the wafer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the adsorption plate contacts the high-temperature wafer directly, then the transfer efficiency is improved, but the temperature difference causes wafer warping

Engineering Contradiction:
Improvetransfer efficiencyVSAvoidwafer flatness
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The heating element pre-heats the adsorption plate before the wafer contacts it, ensuring the plate temperature is close to the wafer temperature. This preliminary temperature equalization prevents thermal shock and warping while maintaining efficient transfer

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The system dynamically adjusts the temperature of the adsorption plate by controlling the heating element based on the wafer temperature. By changing the temperature parameter of the adsorption plate to match the wafer temperature, the system eliminates thermal stress without sacrificing transfer speed

Inventive Principle:
Principle #35Parameter changes

2Force

If the temperature difference between the adsorption plate and wafer is large, then the adsorption force is sufficient, but the wafer surface temperature becomes uneven causing warping

Engineering Contradiction:
Improveadsorption forceVSAvoidwafer temperature uniformity
Core Design Contradiction:
ForceVSTemperature

Solution Approach 1:

The temperature measurement element continuously monitors the wafer temperature and provides feedback to the control element. The control element adjusts the heating element accordingly to maintain the adsorption plate temperature within an optimal range that ensures both sufficient adsorption force and uniform wafer temperature

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The system dynamically adjusts the adsorption plate temperature parameter based on real-time wafer temperature measurements. By optimizing the temperature parameter to be close to but not exceeding the wafer temperature, the system maintains adequate adsorption force while preventing thermal warping

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution effectively reduces temperature differences between the adsorption member and the wafer, alleviating warping and ensuring temperature uniformity, thereby improving wafer quality.

Implementation Method 1

control the heating element to heat the adsorption member

Methodology Applied
Scientific EffectJoule heating: Joule Heating

Implementation Method 2

an adsorption-type manipulator is selected

Methodology Applied
Scientific EffectAdsorption: Adsorption

Data Source

PatentEP4661065A1Transfer apparatus, semiconductor process device and wafer transfer method
Publication Date: 2025.12.10 BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
  • EP4661065A1 patent drawingFigure 1~2
  • EP4661065A1 patent drawingFigure 3~4
  • EP4661065A1 patent drawingFigure 5~7b

AI summary

The present disclosure discloses a transfer device, semiconductor process equipment, and a wafer transfer method, and involves the semiconductor field. A transfer device includes an adsorption finger, a heating element, a first temperature measurement element, a second temperature measurement element, and a control element. The adsorption finger includes an adsorption member configured to adsorb the wafer. The heating element and the first temperature measurement element are arranged at the adsorption member. The second temperature measurement element is arranged at the adsorption finger and spaced apart from the adsorption member. The control element is electrically connected to the heating element, the first temperature measurement element, and the second temperature measurement element. The control element is configured to, when a temperature measured by the second temperature measurement element is higher than a temperature measured by the first temperature measurement element, and according to a difference between the temperature measured by the second temperature measurement element and the temperature measured by the first temperature measurement element, control the heating element to heat the adsorption member to cause the temperature difference to be within the preset temperature difference range. The present disclosure can solve the issue of warping of the wafer due to the large temperature difference between the adsorption plate of the manipulator and the wafer.