Wafer Transfer Device Laser Thickness Monitoring
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Solution Overview
Problem
The existing wafer-etching process incurs time and labor losses due to the need for duplicate thickness measurements before and after etching, which is inefficient and labor-intensive.
Innovation Solution
A wafer transfer device equipped with a moving arm, laser emission unit, and laser detection unit that measures wafer thickness in real-time during processing by emitting a laser and detecting its passage through gaps between wafers, allowing for continuous monitoring and adjustment of processing parameters.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If separate thickness measurement equipment is used before and after wafer etching, then measurement accuracy is ensured, but time and labor losses increase
Solution Approach 1:
The patent combines the thickness measurement function with the wafer transfer device by integrating a laser emission unit and laser detection unit. The laser emission unit emits laser beams through wafer gaps, and the detection unit measures the transmitted laser to calculate thickness, eliminating the need for separate measurement equipment and reducing time losses.
Solution Approach 2:
The wafer transfer device is designed to perform multiple functions: transferring wafers between processing chambers and measuring wafer thickness using integrated laser units. This multi-functional approach allows thickness measurement to be performed during the transfer process without requiring dedicated measurement equipment.
2Reliability
If duplicate thickness measurements are performed before and after etching, then etching quality control is achieved, but labor losses increase
Solution Approach 1:
The system performs thickness measurements before etching, processes the wafers, then performs measurements again after etching using the same integrated laser units. This feedback mechanism allows quality control by comparing before-and-after thickness data to verify etching results, reducing manual labor while maintaining reliability.
3Measurement precision
If separate thickness measurement equipment is used, then measurement functionality is ensured, but device complexity increases
Solution Approach 1:
The laser emission unit and laser detection unit are integrated into the wafer transfer device structure. The emission unit is positioned to shoot lasers through wafer gaps, and the detection unit is positioned to receive transmitted lasers, combining measurement functionality with the transfer mechanism to reduce overall system complexity.
4Measurement precision
If traditional thickness measurement methods are used, then measurement accuracy is maintained, but productivity decreases
Solution Approach 1:
The laser thickness measurement is performed continuously during the wafer transfer process without interrupting production flow. The laser beams pass through wafer gaps while wafers are being transferred, allowing measurement to occur continuously rather than requiring separate measurement steps, thereby improving productivity while maintaining accuracy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution reduces time and labor losses by eliminating the need for separate thickness measurement equipment, enabling real-time monitoring and precise control of the etching process, thereby improving the accuracy and efficiency of wafer processing.
Implementation Method 1
a laser emission unit disposed on the guide and configured to emit a first laser to the wafers, which are seated on the moving arm and are spaced apart from each other, and a laser detection unit disposed under the moving arm and configured to collect a second laser that is a portion of the first laser and has passed through a gap between the wafers
Data Source
AI summary
An embodiment comprises: a guide moving in the vertical direction or the horizontal direction; a transfer arm provided on the guide and loading spaced apart wafers; a laser emission unit disposed on the guide and emitting first laser beams at the spaced apart wafers loaded on the transfer arm; and a laser detection unit disposed below the transfer arm and collecting, from among the first laser beams, second laser beams having passed through gaps between the spaced apart wafers.