Semiconductor Wafer Treating Apparatus UV Oxidation
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Solution Overview
Problem
In-line systems for semiconductor wafer processing face challenges in oxidizing the back of wafers efficiently without significantly increasing space requirements or prolonging the manufacturing process, as existing methods either require excessive space for irradiation or lengthen the process with hydrogen peroxide cleaning.
Innovation Solution
A semiconductor wafer treating apparatus that combines a cleaning device for the ground wafer back with an irradiation means using short wavelength ultraviolet radiation, integrated within a compact housing to oxidize the wafer surface, allowing for efficient oxidation without extensive space or time extension.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an irradiation means is introduced into the in-line system to oxidize the wafer back, then the oxidation problem is solved, but the space required for the system increases considerably
Solution Approach 1:
The patent combines the irradiation means for oxidizing the wafer back with the existing cleaning device in the in-line system. The irradiation unit is integrated into the cleaning apparatus, allowing oxidation to occur during or after the cleaning process without requiring a separate dedicated irradiation station. This merging of functions solves the oxidation problem while minimizing additional space requirements.
Solution Approach 2:
The cleaning device is designed to perform multiple functions: it both cleans the wafer back and provides the irradiation environment for oxidation. By making the cleaning device universal (capable of both cleaning and oxidation functions), the system avoids adding separate specialized equipment, thereby reducing the overall space requirement while still achieving reliable oxidation of the wafer back.
2Reliability
If hydrogen peroxide supply means is introduced to oxidize the wafer back, then oxidation is achieved, but the manufacturing process time is excessively lengthened
Solution Approach 1:
The patent replaces the chemical oxidation method (hydrogen peroxide supply) with a physical/photonic method (ultraviolet irradiation). By using UV light to generate radicals that oxidize the wafer back, the process eliminates the need for chemical supply, handling, and thorough cleaning operations, thereby significantly reducing the overall process time while still achieving reliable oxidation.
Solution Approach 2:
The patent changes the oxidation mechanism from chemical (hydrogen peroxide) to photonic (ultraviolet irradiation). This parameter change in the oxidation method allows the process to be faster and more efficient, as UV irradiation can rapidly generate oxidative radicals on the wafer surface without requiring extended exposure times or subsequent thorough cleaning operations.
3Productivity
If the protective tape is stuck to the wafer back immediately after cleaning, then productivity is maintained, but the wafer back oxidizes forming an oxide film that causes release difficulties and device damage
Solution Approach 1:
The patent applies preliminary oxidation action to the wafer back immediately after cleaning, before the protective tape is applied. By using UV irradiation to create a controlled oxide film in advance, the system ensures that when the protective tape is subsequently applied, the oxide layer provides appropriate affinity control, preventing both excessive adhesion and release difficulties. This preliminary preparation maintains productivity while ensuring reliable device release.
Solution Approach 2:
The patent changes the surface state parameter of the wafer back by introducing controlled oxidation via UV irradiation. This parameter change creates an optimal oxide layer thickness and composition that balances adhesion and release properties, allowing the protective tape to be applied immediately (maintaining productivity) while ensuring proper release characteristics later in the process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables effective oxidation of the wafer back, improving the affinity between the wafer and protective tape, reducing damage and metal ion impairment, while maintaining productivity and process efficiency.
Implementation Method 1
an irradiation means for irradiating the ground and cleaned back of the semiconductor wafer with short wavelength ultraviolet radiation to oxidize the back of the wafer
Data Source
AI summary
A semiconductor wafer treating apparatus comprising a housing, holding means rotatably disposed within the housing, rotating means for rotating the holding means, and cleaning means for cleaning a semiconductor wafer held on the holding means. Irradiation means for irradiating the semiconductor wafer held on the holding means with short wavelength ultraviolet radiation is further disposed in the semiconductor wafer treating apparatus.