Wafer Wire Layer Reflow Filling Without Edge Protrusion
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing methods for manufacturing wire layers in semiconductor manufacturing, particularly using aluminum, often result in defects such as edge protrusion due to the reflowing characteristics of aluminum at high temperatures, which can cause damage and performance issues.
Innovation Solution
A method involving the deposition of conductive grains on a wafer with a temperature lower than the flowing temperature of the conductive film, followed by a reflowing process to convert the conductive film into a layer filling the opening, without plasma impact during deposition, thereby reducing defects and improving production efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If aluminum is used for hole-filling due to its reflowing characteristics at high temperature, then the filling capability is improved, but edge protrusion defects are generated
Solution Approach 1:
The patent applies preliminary action by depositing the conductive film before heating to reflowing temperature. The film is deposited at lower temperature to avoid immediate reflowing, then subsequently heated to achieve controlled reflowing that fills holes without causing edge protrusion defects. This sequential approach separates the deposition and reflowing steps to prevent defect formation.
Solution Approach 2:
The patent utilizes parameter changes by controlling the temperature parameter throughout the process. The temperature is maintained below the reflowing point during deposition, then elevated to the reflowing temperature range (300-400°C) to enable hole filling. This dynamic temperature control allows the material to exhibit different properties at different stages, achieving both precise deposition and effective hole filling without edge protrusion.
2Productivity
If heating evaporation process is used for aluminum deposition, then the deposition efficiency is improved, but plasma impact causes defects
Solution Approach 1:
The patent applies the taking out principle by removing the plasma impact step from the deposition process. Instead of using conventional plasma-enhanced chemical vapor deposition or sputtering, the patent employs a deposition method that does not involve plasma, thereby eliminating plasma-induced defects such as edge protrusion and whisker formation while maintaining deposition efficiency.
Solution Approach 2:
The patent uses a simpler, less complex deposition approach that avoids the need for expensive and complex plasma generation equipment. The method employs direct thermal evaporation or similar techniques that are easier to implement and control, reducing both equipment complexity and operational complexity while achieving the desired deposition results without plasma-related defects.
3Object-generated harmful factors
If multiple process chambers are used to avoid plasma impact, then defect generation is reduced, but device complexity increases
Solution Approach 1:
The patent applies the merging principle by combining the deposition and reflowing processes into a single integrated process chamber. The deposition is performed first, then the same chamber is used to heat and reflow the deposited film. This eliminates the need for separate plasma-free deposition chambers and reflow chambers, reducing overall device complexity while preventing plasma impact defects through the use of a non-plasma deposition technique in the first place.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the generation of defects like edge protrusions and whiskers, enhances reflowing efficiency, and allows for a single-chamber process, improving production efficiency and reducing costs while maintaining the performance of the wafer.
Implementation Method 1
conductive grains are deposited on the wafer, and on a bottom and a side wall of the opening to form a conductive film
Implementation Method 2
when the temperature of the surface of the wafer is greater than or equal to the flowing temperature, the conductive film starts to flow
Implementation Method 3
the conductive film is converted to a conductive layer filling up the opening
Implementation Method 4
after the conductive film is formed, the temperature of the surface of the wafer is elevated to perform a reflowing process
Data Source
AI summary
Some examples of the present disclosure provide a method for manufacturing a wire layer. The method for manufacturing a wire layer includes steps in which a wafer having an opening is provided; conductive grains are deposited on the wafer, and on a bottom and a side wall of the opening to form a conductive film, during which a temperature of a surface of the wafer is lower than a flowing temperature of the conductive film, and when the temperature of the surface of the wafer is greater than or equal to the flowing temperature, the conductive film starting to flow; and after the conductive film is formed, the temperature of the surface of the wafer is elevated to perform a reflowing process, such that the conductive film is converted to a conductive layer filling up the opening.