Wafer X-Ray Metrology for Nanoscale Width Measurement
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Solution Overview
Problem
The increasing miniaturization and complexity of semiconductor devices make them difficult to manufacture consistently and require improved metrology methods for quality assurance.
Innovation Solution
A metrology device utilizing an X-ray source with a wavelength of 0.01 to 10 nm and an image sensor to measure smaller scale structures on wafers, capable of distinguishing features down to 0.005 to 5 nm, and a Fourier transformer to analyze interference patterns for enhanced resolution and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional metrology methods are used for examining semiconductor devices, then the manufacturing process can be maintained, but the measurement precision is insufficient for increasingly smaller and denser semiconductor devices
Solution Approach 1:
The patent changes the wavelength parameter of the illuminating light from conventional visible or UV light to X-ray with wavelength of 0.01 to 10 nm. This parameter change enables the measurement system to resolve much smaller features (0.005 to 5 nm) that are impossible to detect with conventional optical methods, directly addressing the precision limitation.
Solution Approach 2:
The patent replaces conventional optical measurement systems with an X-ray based measurement system. By substituting the illumination source and detection methodology, the system achieves breakthrough in measurement precision for nanoscale semiconductor structures that were previously undetectable.
2Productivity
If semiconductor devices are made increasingly smaller and denser to advance technology, then device capability is improved, but manufacturing consistency and quality become difficult to maintain
Solution Approach 1:
The patent implements a feedback mechanism by examining semiconductor devices at multiple stages during manufacturing using high-precision X-ray metrology. The measurement results provide feedback to the manufacturing process, enabling real-time quality control and adjustment to maintain manufacturing consistency as devices are scaled down.
Solution Approach 2:
The patent performs preliminary examination of semiconductor devices during the manufacturing process before final completion. This early detection of defects and variations allows for corrective actions to be taken while the device is still being manufactured, ensuring quality consistency before the device is released.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves high-resolution measurements of semiconductor structures, enabling reliable quality control by accurately determining features like pitch and width of nanoscale components without damaging the wafer.
Implementation Method 1
illuminating a wafer by an X-ray, detecting a spatial domain pattern produced when the X-ray illuminating the wafer
Implementation Method 2
detecting a spatial domain pattern produced when the X-ray illuminating the wafer, identifying at least one peak from the detected spatial domain pattern
Data Source
AI summary
A method includes placing a wafer on a rotation mechanism of a metrology device; illuminating, by using a light source of the metrology device, the wafer by an X-ray; rotating, by using the rotation mechanism, the wafer while illuminating the wafer by the X-ray; detecting, by using an image sensor of the metrology device, a transmission portion of the X-ray passing through the wafer while rotating the wafer; and obtaining, by using a processor of the metrology device, a top width and a bottom width of a structure over the wafer based on the transmission portion of the X-ray with different rotating angles of the rotation mechanism.