Wall-Shaped Electrode Patterning via Low-Affinity Resist Masking
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Solution Overview
Problem
In small and medium-sized liquid crystal display devices, the formation of wall-shaped electrodes with high positioning accuracy is challenging due to the limited space and the need for precise alignment of photomasks, which affects the display mode efficiency and aperture ratio.
Innovation Solution
A method involving the application of a low-affinity material on the transparent conductive film to form openings and etch the film, allowing for precise exposure and patterning without relying on high-accuracy photomask alignment, thereby improving the formation of wall-shaped electrodes and enhancing electric field distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography technique with photomask is used to form wall-shaped electrodes, then electrode patterning can be achieved, but positioning accuracy deteriorates due to difficulty in aligning photomasks in limited space
Solution Approach 1:
The method applies a low-affinity material to specific regions (head surfaces of columnar bodies) before forming the resist pattern. This preliminary action creates predetermined regions where the resist will not adhere, automatically defining the etching mask pattern without requiring complex photomask alignment. The low-affinity material is applied in advance to establish the precise locations where wall-shaped electrodes should be formed.
Solution Approach 2:
The low-affinity material serves as an intermediary substance between the transparent conductive film and the resist. It mediates the pattern formation process by creating selective adhesion regions, allowing the resist to be applied uniformly while automatically forming the desired pattern through differential adhesion. This intermediary eliminates the need for complex photomask alignment procedures.
2Reliability
If wall-shaped electrodes are formed to improve display mode efficiency, then electric field distribution improves, but manufacturing complexity increases due to additional etching requirements
Solution Approach 1:
The low-affinity material enables the system to self-pattern during the resist application process. The resist automatically forms the correct pattern by adhering only to regions without low-affinity material, eliminating the need for separate photomask alignment and exposure steps. The process self-regulates the pattern formation based on the predetermined low-affinity material distribution.
3Manufacturing precision
If photomask alignment accuracy is increased to improve electrode formation precision, then manufacturing cost increases, but this approach is not scalable for mass production
Solution Approach 1:
The method replaces the mechanical photomask alignment system with a chemical adhesion-based patterning system. Instead of relying on precise mechanical positioning of photomasks, the pattern is defined by the chemical properties of the low-affinity material regions. This substitution eliminates the need for expensive high-precision alignment equipment and enables standard manufacturing processes to achieve the required precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method improves the display mode efficiency and aperture ratio by ensuring precise formation of wall-shaped electrodes, leading to better electric field distribution and display quality, while reducing the complexity and cost associated with high-accuracy photomask alignment.
Implementation Method 1
forming a low-affinity material layer having a low affinity for a liquid resist material on a head surface of the transparent conductive film; forming an opening that exposes the transparent conductive film in a resist film by removing the low-affinity material layer
Implementation Method 2
etching the transparent conductive film which is a lower layer using the resist film as a protective film
Data Source
AI summary
Provided is a method of manufacturing a display device that includes a structure formed so as to protrude at least in a normal direction of a first substrate, and an electrode formed in a side wall surface of the structure, the method including: forming a transparent conductive film for the electrode; forming a low-affinity material having a low affinity for a resist film on an upper surface of the transparent conductive film formed in a head surface of the structure; forming a resist film by applying a liquid resist material to an upper layer of the transparent conductive film and then fixing the resist material; forming an opening that exposes the transparent conductive film in the resist film by removing the low-affinity material; etching the transparent conductive film which is a lower layer using the resist film as a protective film; and removing the resist film.