Warp-Conforming Conductive Members in Semiconductor Packages

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Solution Overview

Problem

Conventional semiconductor devices face challenges in manufacturing and operational reliability due to complex bonding processes and potential cracking or delamination at joints, particularly in devices with silicon carbide (SiC) semiconductor elements and copper-based conductive parts, which can lead to reduced product lifespan and increased manufacturing complexity.

Innovation Solution

The semiconductor device integrates first and second conductive members with specific bonding configurations, including flat sections and inclined sections, to distribute current efficiently and conform to substrate warping, eliminating the need for bonding processes and enhancing operational reliability by preventing current concentration and joint-related issues.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If bonding processes are used to connect conductive parts to semiconductor elements, then electrical connection is achieved, but manufacturing complexity increases and risk of cracking or delamination occurs

Engineering Contradiction:
Improvejoint reliabilityVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the conductive part and semiconductor element into a unified structure where the conductive part directly contacts the semiconductor element without intermediate bonding layers or processes. This integration eliminates the bonding interface that causes cracking and delamination, while also simplifying the manufacturing process by removing bonding steps.

Inventive Principle:
Principle #5Merging (Combining)

2Reliability

If conventional bonding structures are used, then electrical connection is established, but current concentration occurs leading to reduced operational reliability

Engineering Contradiction:
Improveoperational reliabilityVSAvoidcurrent concentration
Core Design Contradiction:
ReliabilityVSObject-generated harmful factors

Solution Approach 1:

The patent applies local quality by designing the conductive part with a specific contact area configuration that distributes current evenly across the interface with the semiconductor element. The contact surface is engineered to have optimal dimensions and shape that prevent current concentration at specific points, thereby improving operational reliability.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration simplifies manufacturing, enhances operational reliability, and extends product lifespan by preventing cracking and delamination, while ensuring uniform heat dissipation and efficient current distribution across the semiconductor device.

Implementation Method 1

The conductive layers are made of, for example, copper (Cu), and one of the conductive layers is bonded to the semiconductor element

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Implementation Method 2

The base is made of, for example a ceramic material... ensuring uniform heat dissipation

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS20240429138A1Semiconductor device
Publication Date: 2024.12.26 ROHM CO LTD
  • US20240429138A1 patent drawing
  • US20240429138A1 patent drawing
  • US20240429138A1 patent drawing

AI summary

A semiconductor device A1 includes a supporting substrate 3, a plurality of first semiconductor elements 10A, a plurality of second semiconductor elements 10B, a first terminal 41, a first conductive member 5, a second conductive member 6, and a sealing resin 8. The first conductive member 5 includes a plurality of first bonding parts 52 bonded to the respective first semiconductor elements 10A and a second bonding part 53 bonded to a second conductive part 32B. The second conductive member 6 includes a plurality of third bonding parts 61 bonded to the respective second semiconductor elements 10B. The positions of at least either first end sections 525 of the plurality of first bonding parts 52 or third end sections 615 of the plurality of third bonding parts 61 in the z direction are designed to conform to warping of the supporting substrate 3. This configuration makes it possible to prevent the shortening of product life, even if a component experiences deformation, such as warping.