Warp Correction Device for Semiconductor Substrates
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Solution Overview
Problem
Existing methods for correcting warps in semiconductor element substrates, such as those made of sapphire, are either costly or prone to substrate damage, and lack stability in warp correction due to variations in film quality and thickness, making them unsuitable for mass production.
Innovation Solution
A warp correction apparatus that includes an injection mechanism with a nozzle for injecting particles onto the rear surface of the substrate, an adsorption table for holding the substrate, a moving mechanism for relative movement, a measurement mechanism for assessing warp, and a control device for setting injection conditions based on target warp values, allowing for efficient correction and yield improvement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a large-sized press device is used to correct warp by pressing at high pressure, then warp correction is achieved, but device costs increase and substrate cracks occur more frequently
Solution Approach 1:
The patent replaces the conventional mechanical press device with a plasma processing system. Instead of applying mechanical pressure to correct warp, the invention uses plasma irradiation to modify the substrate structure and correct warp through thermal and chemical effects, thereby eliminating the risk of substrate cracking associated with high-pressure mechanical pressing
Solution Approach 2:
The invention changes the correction mechanism from mechanical pressure to plasma processing parameters (power, gas flow, treatment time). By controlling plasma parameters rather than mechanical force, the system achieves warp correction without the damaging effects of high pressure, improving substrate reliability
2Manufacturing precision
If pulsed laser light is used to modify the interior of sapphire substrate, then warp correction is achieved, but high surface roughness and positional accuracy requirements increase device costs
Solution Approach 1:
The patent replaces the laser processing system with a plasma processing system. Instead of using focused laser beams that require high positional accuracy, the invention uses plasma that can be distributed over the entire substrate surface, eliminating the need for precise positioning systems and reducing device complexity
Solution Approach 2:
The invention divides the substrate into multiple regions that are treated sequentially or simultaneously by plasma. The plasma processing can be applied uniformly across the substrate or in specific zones, providing warp correction without requiring the high positional accuracy needed for laser scanning
3Manufacturing precision
If laser irradiation is used after film formation, then warp correction is attempted, but warp amount varies with film quality and thickness making correction unstable
Solution Approach 1:
The patent applies plasma processing before film formation to correct substrate warp in advance. By correcting the substrate warp before depositing the semiconductor film, the invention eliminates the variability caused by different film qualities and thicknesses, ensuring stable warp correction that is independent of subsequent film characteristics
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively corrects substrate warps with reduced device costs and improved yield by measuring and adjusting injection treatment conditions, preventing substrate damage and ensuring warp correction within target limits, making it suitable for mass production.
Implementation Method 1
an injection mechanism having a nozzle that performs injection treatment of injecting an injection particle to a rear surface that is opposite to a principal surface or opposite to a film surface in the semiconductor element substrate
Implementation Method 2
an adsorption table that adsorbs the principal surface or the film surface of the semiconductor element substrate to hold the semiconductor element substrate
Data Source
AI summary
A warp correction apparatus includes an injection mechanism including a nozzle that performs injection treatment, an adsorption table that holds the substrate by adsorption at a principal surface side or a film surface side, a moving mechanism that moves the adsorption table so that the substrate relatively moves with respect to an injection area of an injection particle by the nozzle, an injection treatment chamber that houses the substrate held on the adsorption table and in the interior of which injection treatment is performed, a measurement mechanism that measures a warp of the substrate, and a control device that, based on a difference between a target warp amount and a warp amount measured by the measurement mechanism, performs at least either one of a setting processing of an injection treatment condition of the injection mechanism and an accept/reject determination of the substrate for which injection treatment has been performed.