Non-Uniform Warpage Control Layer for Microelectronic Packages

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Solution Overview

Problem

Microelectronic devices, particularly semiconductor packages, experience warpage due to thermal expansion differences during fabrication and testing, leading to potential electrical connection failures and reduced lifespan due to stress-induced bending.

Innovation Solution

Incorporating a warpage control layer of non-uniform thickness over the encapsulant material, formed from materials with coefficients of thermal expansion matching or differing from the package components, to mitigate warpage by redistributing bending stresses and maintaining structural integrity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If semiconductor devices are reduced in size to increase portability and computing power, then device density and integration are improved, but sensitivity to warpage is enhanced

Engineering Contradiction:
Improvedevice sizeVSAvoidwarpage sensitivity
Core Design Contradiction:
Volume of moving objectVSReliability

Solution Approach 1:

The patent applies local quality by creating a warpage control layer with non-uniform thickness distributed across the package. Different regions of the package receive different thicknesses of the control layer, allowing localized compensation for warpage stresses that vary across the device structure. This targeted approach addresses warpage sensitivity in small devices without adding uniform complexity throughout.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent utilizes parameter changes by varying the thickness parameter of the warpage control layer to compensate for thermal expansion differences. By adjusting the thickness parameter of the control layer in different regions, the patent counteracts the enhanced warpage sensitivity that arises from size reduction, maintaining reliability despite smaller dimensions.

Inventive Principle:
Principle #35Parameter changes

2Area of stationary object

If packages comprise stacked semiconductor devices to increase capacity and computing power, then real estate consumption is reduced, but sensitivity to warpage is enhanced

Engineering Contradiction:
Improvesurface areaVSAvoidwarpage sensitivity
Core Design Contradiction:
Area of stationary objectVSReliability

Solution Approach 1:

The patent applies local quality by positioning the warpage control layer with non-uniform thickness at specific locations on the package surface. This allows targeted warpage compensation in regions where stacked devices create the most stress, rather than uniformly treating the entire package surface. The non-uniform distribution addresses the enhanced warpage sensitivity in POP assemblies efficiently.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent employs composite materials by combining the warpage control layer with the encapsulant material to form a composite structure. This composite approach allows the control layer to work synergistically with the encapsulant to manage thermal expansion stresses in stacked device configurations, improving reliability without significantly increasing surface area.

Inventive Principle:
Principle #40Composite materials

3Reliability

If warpage control layer of non-uniform thickness is applied to mitigate warpage, then connection reliability is improved, but device complexity is increased

Engineering Contradiction:
Improveconnection reliabilityVSAvoidpackage structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies local quality by implementing the warpage control layer with non-uniform thickness only where needed on the package surface. This localized approach improves connection reliability in critical areas without adding complexity throughout the entire device structure. The non-uniform thickness distribution targets warpage-prone regions specifically.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent uses parameter changes by varying the thickness parameter of the warpage control layer to achieve reliable warpage compensation. By controlling the thickness parameter in different regions, the patent improves connection reliability while maintaining a relatively simple overall structure that can be integrated into existing packaging processes.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The warpage control layer effectively reduces warpage, enhancing the semiconductor device package's resistance to thermal stresses, improving connection reliability and extending the device's operational lifespan by balancing thermal expansion coefficients and redistributing bending stresses.

Implementation Method 1

warpage control layer of non-uniform thickness over the encapsulant material, formed from materials with coefficients of thermal expansion matching or differing from the package components, to mitigate warpage by redistributing bending stresses

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Data Source

PatentUS11855002B2Warpage control in microelectronic packages, and related assemblies and methods
Publication Date: 2023.12.26 MICRON TECHNOLOGY INC
  • US11855002B2 patent drawing
  • US11855002B2 patent drawing
  • US11855002B2 patent drawing

AI summary

A microelectronic device and/or microelectronic device package having a warpage control structure. The warpage control structure may be positioned over an encapsulating material, wherein the encapsulating material is positioned between the warpage control structure and a die positioned over a substrate. The warpage control structure may have a first thickness over a first portion of the encapsulating material and a second thickness over a second portion of the encapsulating material. Methods of forming the microelectronic device are also disclosed herein.