Semiconductor Plating Washer Nozzle Layout for Oxide Film Prevention
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Solution Overview
Problem
In semiconductor manufacturing, the formation of oxide films during water washing between plating treatments can lead to inadequate contact between metal layers, resulting in incomplete plating and reduced electrical conductivity and durability of through electrodes.
Innovation Solution
A semiconductor manufacturing method involving a washer bar with nozzles arranged to provide uniform water washing across the wafer surface, ensuring moderate and even removal of plating liquid without forming thick oxide films, thereby enhancing the contact performance between metal layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of substance
If the surface of the metal film is washed with water to remove the plating liquid, then the plating liquid is removed from the metal film surface, but an oxide film is formed on the metal film surface
Solution Approach 1:
The patent changes the chemical parameter of the washing liquid from water to acid liquid, which alters the chemical interaction with the metal film surface. The acid liquid removes plating liquid without forming oxide films, or forms minimal oxide films that are subsequently removed, thereby resolving the contradiction between effective washing and oxide film prevention
Solution Approach 2:
The acid liquid acts as an intermediary substance between the plating liquid and the metal film surface. It facilitates the removal of plating liquid while simultaneously preventing harmful oxide film formation through its chemical properties, serving as a mediating agent that achieves both washing effectiveness and surface protection
2Ease of manufacture
If a new metal film is formed by plating treatment on the oxide film, then the metal film is formed, but the contact performance between the oxide film and the metal film is not good
Solution Approach 1:
The patent applies preliminary anti-action by using acid liquid washing to prevent oxide film formation before the next metal film deposition. By eliminating the oxide film barrier in advance, the subsequent plating treatment achieves good contact performance with the underlying metal layer, preventing plating failures and ensuring reliable electrical contact
3Loss of substance
If water washing is used to remove plating liquid, then the plating liquid is removed, but incomplete plating may occur due to inadequate contact
Solution Approach 1:
The patent changes the washing liquid parameter from neutral water to acidic solution, which fundamentally alters the surface chemistry during washing. This parameter change ensures complete plating by preventing oxide film formation that would otherwise interfere with subsequent metal deposition, thereby achieving both effective washing and complete plating
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method improves the adhesion and conductivity of stacked metal films, reducing the incidence of incomplete plating and ensuring reliable high-quality electrodes, such as through electrodes, by maintaining a uniform water distribution and preventing excessive oxide film formation.
Implementation Method 1
ejecting, from a washer bar spaced from the one main surface, a washing liquid onto the one main surface of the semiconductor wafer
Implementation Method 2
a technique is known in which chips on or in which a semiconductor element or an integrated circuit is formed are stacked as multiple layers on a substrate to reduce the surface area of a resulting semiconductor device
Data Source
AI summary
A semiconductor manufacturing method includes forming a first metal film on a semiconductor wafer by plating, ejecting liquid from a washer bar spaced from the wafer while rotating at least one of the washer and the semiconductor, and forming a second metal film on the first metal film. A plurality of nozzles are located on the washer bar and displaced from the position of the washer bar opposed to the center of the wafer, and a greater number of nozzles are adjacent the peripheral area of the semiconductor wafer than the central area of the semiconductor wafer. The nozzles in the peripheral area of the wafer eject the washing liquid in a direction inclined from the direction of the washer bar, and a nozzle arranged on the central area of the one main surface of the semiconductor wafer ejects the washing liquid towards the center position of the semiconductor wafer.