Waveform Conversion Circuit for GaN FET Gate Drive

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Solution Overview

Problem

The normally-off GaN FET faces challenges due to its low threshold voltage and susceptibility to breakage under high voltage, requiring a specialized gate driver that can convert gate drive voltage without reducing switching speed and supply a negative voltage for proper operation.

Innovation Solution

A waveform conversion circuit comprising a parallel circuit of a capacitor and a resistor, coupled with a voltage clamp unit, is used to convert the gate drive voltage for Si MOSFETs to that suitable for normally-off GaN FETs, employing zener diodes or diodes to clamp voltages and ensure safe operation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If a high voltage is applied to the gate of the normally-off GaN FET to shorten the turn-on time, then the switching speed is improved, but the GaN FET breaks easily due to its low breakdown voltage

Engineering Contradiction:
Improveturn-on timeVSAvoidbreakdown voltage tolerance
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The patent introduces a waveform conversion circuit as an intermediary between the control signal source and the GaN FET gate. This circuit converts the control signal into a waveform with limited voltage amplitude that matches the GaN FET's breakdown voltage characteristics, enabling fast switching without exceeding the device's voltage tolerance

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The waveform conversion circuit dynamically changes the voltage parameter of the control signal to match the GaN FET's specific requirements. By adjusting the output voltage waveform parameters (amplitude, shape) based on the device characteristics, the circuit achieves optimal switching performance while preventing breakdown

Inventive Principle:
Principle #35Parameter changes

2Speed

If a negative voltage is applied to the gate of the normally-off GaN FET to shorten the turn-off time, then the switching speed is improved, but a negative power source is required which increases device complexity

Engineering Contradiction:
Improveturn-off timeVSAvoidpower source requirements
Core Design Contradiction:
SpeedVSDevice complexity

Solution Approach 1:

The waveform conversion circuit generates the negative voltage waveform internally using the control signal itself as the energy source. The circuit employs capacitive coupling and voltage inversion mechanisms to create negative voltage swings without requiring an external negative power supply, making the system self-sufficient

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The circuit transforms the control signal parameters to generate both positive and negative voltage excursions. By manipulating the waveform shape and timing, the circuit produces the necessary negative gate voltage for fast turn-off while maintaining compatibility with a single positive power source

Inventive Principle:
Principle #35Parameter changes

3Productivity

If the gate drive voltage waveform is optimized for Si MOSFETs, then the Si MOSFET operates efficiently, but the normally-off GaN FET cannot be driven properly due to voltage and waveform incompatibility

Engineering Contradiction:
Improveoperational efficiencyVSAvoidtransistor type compatibility
Core Design Contradiction:
ProductivityVSAdaptability or versatility

Solution Approach 1:

The waveform conversion circuit adjusts key voltage parameters including amplitude, rise time, fall time, and duty cycle to match the specific requirements of different transistor types. This parameter optimization enables the same control signal to efficiently drive both Si MOSFETs and GaN FETs with their different electrical characteristics

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent designs a universal waveform conversion circuit that can adapt to drive multiple types of switching devices. By incorporating adjustable parameters and configurable output characteristics, the circuit serves as a multi-functional interface between the controller and various transistor technologies

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution allows for the conversion of gate drive voltage without reducing switching speed, enabling the use of a negative voltage to turn off the GaN FET and preventing damage from high voltages, thus providing a suitable gate driver for normally-off GaN FETs.

Implementation Method 1

employing zener diodes or diodes to clamp voltages and ensure safe operation

Methodology Applied
Scientific EffectZener breakdown: Avalanche Breakdown

Implementation Method 2

A waveform conversion circuit comprising a parallel circuit of a capacitor and a resistor

Methodology Applied
Scientific EffectCapacitive coupling: Capacitance

Data Source

PatentUS10498324B2Waveform conversion circuit for gate driver
Publication Date: 2019.12.03 ANCORA SEMICON INC
  • US10498324B2 patent drawing
  • US10498324B2 patent drawing
  • US10498324B2 patent drawing

AI summary

A waveform conversion circuit for turning a switch device on and off by applying a control signal from a controller to a gate terminal of the switch device is provided. The switch device has the gate terminal, a drain terminal, and a source terminal. The waveform conversion circuit includes a parallel circuit of a first capacitor and a first resistor and a voltage clamp unit. The parallel circuit is coupled between the controller and the gate terminal. The voltage clamp unit is coupled between the gate terminal and the source terminal and configured to clamp a voltage across the gate terminal to the source terminal at a first voltage in an OFF pulse of the control signal and at a second voltage in an ON pulse of the control signal.