Waveguide-Embedded Semiconductor Package for High-Speed Data Transmission

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Solution Overview

Problem

The manufacturing of miniaturized semiconductor devices is complex, leading to structural deficiencies and yield loss due to poor communication speed between integrated semiconductor chips, which increases manufacturing costs.

Innovation Solution

A semiconductor structure and method involving a substrate with an interconnect structure, dielectric layer, conductive members, and a waveguide that converts electrical signals to electromagnetic signals for high-speed transmission, achieving data transfer rates greater than 10 gigabits per second with minimized energy loss.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If conventional electrical signal transmission is used between semiconductor chips, then the manufacturing process is simple, but the data transmission speed is limited and cannot achieve ultra-high speed communication

Engineering Contradiction:
Improvedata transmission speedVSAvoidmanufacturing process complexity
Core Design Contradiction:
SpeedVSDevice complexity

Solution Approach 1:

The patent replaces conventional electrical signal transmission through conductive traces with electromagnetic signal transmission through a waveguide structure. This substitution enables ultra-high speed data transmission (greater than 10 gigabits per second) by using electromagnetic fields instead of electrical currents, fundamentally changing the transmission mechanism to overcome speed limitations while maintaining manufacturing feasibility through standardized waveguide integration processes

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the fundamental transmission parameter from electrical signals to electromagnetic signals, enabling data transmission speeds greater than 10 gigabits per second. This parameter change is achieved by integrating a waveguide structure that supports electromagnetic mode propagation, transforming the transmission medium's characteristics to achieve ultra-high speed communication between semiconductor chips

Inventive Principle:
Principle #35Parameter changes

2Adaptability or versatility

If miniaturized semiconductor devices are manufactured with multiple chips integrated, then functionality and integration are improved, but structural deficiencies and delamination occur leading to yield loss

Engineering Contradiction:
Improveintegration functionalityVSAvoidstructural integrity
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The patent embeds the waveguide structure within the dielectric layer of the semiconductor package, creating a nested configuration where the waveguide is integrated into the existing package structure. This nesting approach allows ultra-high speed transmission functionality to be added without requiring separate external components, maintaining compact form factor while improving reliability through integrated structural support

Inventive Principle:
Principle #7Nested doll (Nesting)

Solution Approach 2:

The patent uses a composite structure combining dielectric materials with embedded waveguide elements and conductive members. This composite construction provides both the electrical isolation properties of dielectric materials and the electromagnetic transmission capabilities of the waveguide structure, enhancing overall structural integrity while enabling ultra-high speed data transmission between multiple integrated chips

Inventive Principle:
Principle #40Composite materials

3Adaptability or versatility

If more manufacturing operations are implemented in small semiconductor devices, then functionality is enhanced, but manufacturing complexity and cost increase

Engineering Contradiction:
Improvedevice functionalityVSAvoidmanufacturing cost
Core Design Contradiction:
Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

The waveguide structure serves multiple functions simultaneously: it provides ultra-high speed electromagnetic signal transmission, acts as an integrated component within the semiconductor package, and enables future scalability for additional transmission channels. This multi-functionality reduces the need for separate specialized components, simplifying the manufacturing process and reducing overall device cost while enhancing functionality

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent transitions from planar electrical trace transmission to three-dimensional electromagnetic waveguide transmission by embedding the waveguide within the dielectric layer. This dimensional change enables ultra-high speed transmission capabilities without proportionally increasing manufacturing complexity, as the waveguide can be fabricated using standard semiconductor processing techniques adapted for electromagnetic transmission

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enables ultra-high speed signal transmission and high-frequency communication between semiconductor chips, improving the performance and reducing manufacturing costs by enhancing the structural integrity and efficiency of semiconductor devices.

Implementation Method 1

The waveguide is configured to transmit an electromagnetic signal between the first conductive member and the second conductive member

Methodology Applied
Scientific EffectElectromagnetic signal transmission: Electromagnetic Induction

Data Source

PatentUS11508677B2Semiconductor package for high-speed data transmission and manufacturing method thereof
Publication Date: 2022.11.22 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US11508677B2 patent drawing
  • US11508677B2 patent drawing
  • US11508677B2 patent drawing

AI summary

A semiconductor structure and a method of forming the same are provided. A method of manufacturing the semiconductor structure includes: providing a substrate; depositing a first dielectric layer over the substrate; attaching a waveguide to the first dielectric layer; depositing a second dielectric layer to laterally surround the waveguide; and forming a first conductive member and a second conductive member over the second dielectric layer and the waveguide, wherein the first conductive member and the second conductive member are in contact with the waveguide. The waveguide is configured to transmit an electromagnetic signal between the first conductive member and the second conductive member.