Monolithic WDM VCSEL Arrays via Quantum Well Intermixing

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Solution Overview

Problem

Existing VCSEL-based WDM transmitters face challenges in increasing bandwidth density without adding fiber count, with previous solutions requiring precise temperature control, multiple oxidation/etching steps, or complex bonding processes, which increase packaging complexity and cost.

Innovation Solution

Monolithic WDM VCSEL arrays utilize quantum well intermixing (QWI) to achieve spatially varying gain peaks, allowing each VCSEL to emit light at different wavelengths, with the process involving the creation of point defects through rapid thermal annealing and stress-inducing layers to control intermixing, reducing packaging complexity and cost.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If quantum well intermixing is used to achieve spatially varying gain peaks, then bandwidth density increases and packaging complexity reduces, but manufacturing precision requirements increase

Engineering Contradiction:
Improvebandwidth densityVSAvoidpoint defect concentration control
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent changes the concentration and distribution of point defects in the sacrificial layer as a controllable parameter to achieve different degrees of quantum well intermixing. By adjusting point defect concentration during rapid thermal annealing, spatially varying gain peaks are obtained, enabling wavelength division multiplexing while simplifying packaging.

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If rapid thermal annealing with stress-inducing layers is used to create point defects, then quantum well intermixing is controlled, but process complexity increases

Engineering Contradiction:
Improvequantum well intermixing controlVSAvoidprocess steps
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent introduces a sacrificial layer with stress-inducing layers before the quantum well structure during epitaxial growth. This preliminary action creates a controlled source of point defects that will be activated during subsequent rapid thermal annealing, enabling precise intermixing control without requiring complex post-processing steps.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The sacrificial layer acts as an intermediary that mediates the creation of point defects. The stress-inducing layers within the sacrificial layer generate controlled point defects during thermal annealing, which then diffuse into the quantum well region to achieve the desired intermixing. This intermediary approach simplifies the overall process compared to direct defect creation methods.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach efficiently utilizes datacenter optical fiber infrastructure, increases bandwidth density, and reduces packaging costs and complexity by enabling VCSELs to emit distinct wavelengths without introducing optical loss or reliability issues.

Implementation Method 1

subjecting the portion to a first elevated temperature for a period of time to drive the point defects toward the multiple quantum well layer and induce intermixing between the quantum well and barrier layers

Methodology Applied
Scientific EffectDiffusion: Diffusion

Implementation Method 2

The method may include subjecting the sacrificial cap layer to rapid thermal annealing to create point defects in the sacrificial cap layer

Methodology Applied
Scientific EffectThermal annealing: Annealing

Data Source

PatentUS10050414B2Monolithic WDM VCSEL arrays by quantum well intermixing
Publication Date: 2018.08.14 HEWLETT PACKARD ENTERPRISE DEV LP
  • US10050414B2 patent drawing
  • US10050414B2 patent drawing
  • US10050414B2 patent drawing

AI summary

An array of monolithic wavelength division multiplexed (WDM) vertical cavity surface emitting lasers (VCSELs) is provided with quantum well intermixing. Each VCSEL includes a bottom distributed Bragg reflector (DBR), an upper distributed Bragg reflector, and a laser cavity therebetween. The laser cavity includes a multiple quantum well (MQW) layer sandwiched between a lower separate confinement heterostructure (SCH) and an upper SCH layer. Each MQW region experiences a different amount of quantum well intermixing and concomitantly a different lasing wavelength shift.