Weak Page Buffer Stabilizes Non-Volatile Memory Read Errors
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Solution Overview
Problem
Non-volatile memory devices experience reliability issues, particularly with read errors in weak pages, due to unstable voltage levels in partially written word lines, leading to uncorrectable errors and data loss.
Innovation Solution
The system employs a weak page buffer to temporarily store data from weak pages, using a driver software with read transaction intercept logic and buffer page eviction logic to stabilize voltage levels by ensuring all pages in a word line are fully written before reading, and utilizes a sliding commit window to safeguard data against power failures and write errors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If pages are written or programmed into non-volatile memory, then data storage capability is improved, but read errors occur in weak pages due to unstable voltage levels
Solution Approach 1:
The system performs preliminary actions by detecting weak pages before read operations and stabilizing their voltage levels in advance. The memory controller identifies pages with unstable voltage levels and applies corrective write operations to ensure proper programming before data is read, preventing read errors from occurring in the first place.
Solution Approach 2:
The system implements feedback mechanisms where the memory controller continuously monitors page status and voltage levels. When read errors are detected or weak pages are identified, the controller automatically initiates stabilization procedures including additional write operations and verification reads, creating a closed-loop system that ensures data reliability.
2Reliability
If all pages in a word line are fully written before reading, then read errors are reduced, but write operation time increases
Solution Approach 1:
Instead of requiring all pages in a word line to be fully written, the system applies local quality by treating each page individually. The memory controller identifies specific weak pages that need stabilization and applies additional write operations only to those pages, rather than uniformly processing entire word lines, thus reducing unnecessary write time while maintaining read accuracy.
Solution Approach 2:
The system uses partial action by performing write operations and verification only on pages that are actually needed and identified as weak, rather than completing all possible writes in a word line. This selective approach prevents wasting time on pages that are already properly programmed or will not be read soon.
3Reliability
If weak pages are stabilized through additional write operations, then read errors are prevented, but power consumption increases
Solution Approach 1:
The system applies local quality by concentrating power expenditure only on weak pages that require stabilization. The memory controller identifies specific pages with unstable voltage levels and directs additional write operations and verification reads only to those pages, rather than uniformly processing entire word lines, thus reducing unnecessary power consumption while maintaining page stability.
Solution Approach 2:
The system performs preliminary detection of weak pages before executing power-intensive stabilization operations. By identifying pages with unstable voltage levels in advance through light initial reads or metadata inspection, the system avoids wasting power on pages that are already stable, and concentrates energy resources only where needed for voltage stabilization.
Data Source
AI summary
A memory apparatus and methods are provided for preventing read errors on weak pages in a non-volatile memory system. In one example, a method includes identifying a weak page in a non-volatile memory device along a word line, wherein the weak page is partially written with at least some data; buffering data associated with the weak page to a weak page buffer that is coupled in communication with the non-volatile memory device; determining that an amount of data in the weak page buffer has reached a predetermined data level; and writing the data from the weak page buffer into the weak page along the word line in the non-volatile memory device.