Semiconductor Well Antenna Rule With Gate Area Factors
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Solution Overview
Problem
Current well antenna rules in the semiconductor industry do not adequately account for essential gate factors, leading to a lack of physical model basis and frequent mismatches with actual test results, limiting their applicability to complex well antenna circuits and structures.
Innovation Solution
A novel semiconductor structure and method that introduces gate area factors into the well antenna rule, allowing for a more physically grounded approach to defining safe operation areas and improving adaptability across different antenna circuits and structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional well antenna rule is used without gate area factors, then the rule is simple to implement, but it lacks physical model basis and frequently mismatches with actual test results
Solution Approach 1:
The patent introduces gate area factors (Ag1, Ag2) as new parameters into the well antenna rule formula, transforming it from a simple area ratio to a comprehensive evaluation that incorporates gate structure characteristics. This parameter enhancement provides physical model basis while maintaining computational simplicity, resolving the contradiction between ease of implementation and accuracy of damage evaluation.
2Productivity
If conventional well antenna rule is used, then the calculation is straightforward, but it cannot be applied extensively to complicated well antenna circuits and structures
Solution Approach 1:
The patent enhances the universality of the well antenna rule by incorporating gate area factors that can accommodate various circuit configurations including embedded high-voltage devices, complex well antenna circuits, and different metal interconnect structures. The formula Aam/(Adnw×C1+Agate×C2) serves multiple evaluation purposes across different device types, maintaining calculation efficiency while expanding adaptability to complicated circuits and structures.
3Ease of manufacture
If conventional well antenna rule is used, then the rule is easy to calculate, but it needs frequent modification as more data is received from different products and processes
Solution Approach 1:
The patent performs preliminary action by incorporating gate area factors into the well antenna rule formulation, establishing a physically-based model that accounts for gate structure characteristics from the design stage. This preliminary consideration of gate factors creates a more robust evaluation framework that reduces the need for frequent modifications when new product or process data becomes available, thereby improving evaluation consistency while maintaining calculation simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The introduction of gate area factors enhances the accuracy of the well antenna rule, aligning it better with actual test results and enabling broader application to various antenna circuits and structures, thereby improving the reliability of semiconductor devices.
Implementation Method 1
excess charging during semiconductor processes, which may further punch through gate oxide layer
Implementation Method 2
Plasma induced damage (PID) is a well-known damage mechanism in semiconductor industry
Implementation Method 3
large-area isolated wells, ex. deep N-well (DNW), may possibly be charged due to the connection of metal interconnects and the sources, drains and doped regions therein
Data Source
AI summary
A semiconductor structure is provided in the present invention, including a substrate, a deep N-well formed in the substrate, a first well formed in the deep N-well, a first gate formed on the first well, a first source and a first drain formed respectively at two sides of the first gate in the first well, a first doped region formed in the first well, and a metal interconnect electrically connected with the first source and the first doped region, wherein an area of the deep N-well multiplied by a first parameter is a first factor, an area of the first gate multiplied by a second parameter is a second factor, and an area of the metal interconnect divided by a sum of the first factor and the second factor is less than a specification value.