Temperature-Responsive Well Potential Control for MOS Leakage
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Solution Overview
Problem
The off leakage current of transistors in semiconductor devices varies with ambient temperature, necessitating an adjustment of well potentials to minimize leakage current.
Innovation Solution
A power supply circuit that generates adjustable well potentials for p-type and n-type wells using variable resistors and a control circuit, which adjusts the resistance values based on ambient temperature and enables signals to optimize well potentials and reduce off leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If the well potential is adjusted in accordance with ambient temperature, then the off leakage current is reduced, but the device complexity increases due to the need for temperature sensing and dynamic control circuits
Solution Approach 1:
The power supply circuit automatically senses the ambient temperature and adjusts the well potential without requiring external control signals. The temperature sensor integrated in the circuit continuously monitors temperature changes and the control circuit autonomously modifies the resistance values of variable resistors to maintain optimal well potential, enabling the system to serve itself
Solution Approach 2:
The circuit incorporates a feedback mechanism where the temperature sensor output is fed to the control circuit, which continuously adjusts the well potential based on the sensed temperature. This closed-loop control ensures that the well potential dynamically responds to temperature variations, minimizing off leakage current while maintaining system stability
2Device complexity
If fixed well potential is applied to the wells, then the device structure is simple, but the off leakage current increases with temperature variations
Solution Approach 1:
The patent transforms the static well potential supply into a dynamic system by incorporating temperature-sensing capabilities and variable resistors that automatically adjust their resistance values based on ambient temperature. This dynamic adjustment ensures the well potential adapts to temperature changes, reducing off leakage current while maintaining relatively simple circuit architecture
Solution Approach 2:
The invention changes the electrical parameter (well potential) dynamically by modifying the resistance values of variable resistors in response to temperature variations. The control circuit adjusts these resistance parameters to maintain optimal well potential levels, thereby reducing off leakage current without requiring complex circuit topologies
Data Source
AI summary
An apparatus that includes a MOS transistor arranged in a well region supplied with a well potential, a temperature sensor configured to generate a control code indicating an ambient temperature, and a voltage generator configured to perform a control operation controlling a level of the well potential responsive to the control code in a first condition and perform a second control operation controlling a level of the well potential regardless of the control code in a second condition.