Integrated Wet Bevel Cleaning Before Semiconductor Capping
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Solution Overview
Problem
Conventional semiconductor processing systems face challenges in efficiently removing metal deposition from edge regions of substrates without damaging the underlying structures, particularly due to the need for additional steps like plasma etching or wet chemistry, which can lead to overetching and integrity issues with multi-layer metal structures.
Innovation Solution
Incorporating a wet clean system within a cluster tool that allows for edge and bevel cleaning before forming a capping layer, enabling efficient removal of metal from substrate edges and subsequent formation of a protective capping layer in a vacuum environment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional processing systems attempt to remove metal deposition from edge regions after capping layer formation, then metal removal may be achieved, but film peeling and device failure occur due to damage to the substrate and metal layers
Solution Approach 1:
The wet clean system performs edge and bevel cleaning of metal deposition before the capping layer is deposited. This preliminary removal action eliminates the need for subsequent aggressive capping layer removal processes that would damage the substrate and metal layers, thereby preventing film peeling and device failure while achieving clean edge regions.
2Manufacturing precision
If additional process steps are added to remove metal from edge regions, then metal removal capability is improved, but process complexity increases and material integrity is compromised
Solution Approach 1:
By performing the wet clean operation before capping layer deposition, the system removes metal from edge regions in advance, eliminating the need for additional post-deposition removal steps. This single preliminary action simplifies the overall process flow while effectively cleaning edge regions without compromising material integrity.
Solution Approach 2:
The wet clean system extracts and removes metal deposition from edge regions and bevels before the capping layer is applied. This extraction of problematic material at the optimal timing prevents subsequent processing complications and eliminates the need for complex multi-step removal procedures that would follow capping layer formation.
3Adaptability or versatility
If wet clean system is integrated into cluster tool, then edge and bevel cleaning is enabled, but system complexity increases
Solution Approach 1:
The wet clean system is integrated into the existing cluster tool architecture, merging the cleaning functionality with the deposition and processing capabilities. This consolidation allows edge and bevel cleaning to be performed within the same tool environment, sharing common infrastructure such as transfer chambers, robots, and control systems, thereby reducing overall system complexity despite added functionality.
Solution Approach 2:
The cluster tool is designed with multi-functionality, where the same tool performs deposition, processing, and wet cleaning operations. The wet clean chamber and associated systems are integrated into the universal cluster tool platform, allowing a single system to handle multiple process types without requiring separate dedicated equipment, thus minimizing the increase in system complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces process complexity, minimizes damage to metal layers, and ensures a more uniform and effective capping layer coverage, enhancing the integrity and cost-effectiveness of semiconductor processing.
Implementation Method 1
Processing the substrate in the wet clean chamber may include wet etching one or more of the one or more layers of metal-containing materials on a substrate to fully remove a material from an edge region of the substrate
Implementation Method 2
The deposition chamber may be coupled with the transfer chamber
Implementation Method 3
The deposition chamber may be coupled with the transfer chamber
Data Source
AI summary
Exemplary integrated cluster tools may include a factory interface including a first transfer robot. The tools may include a wet clean system coupled with the factory interface at a first side of the wet clean system. The tools may include a load lock chamber coupled with the wet clean system at a second side of the wet clean system opposite the first side of the wet clean system. The tools may include a first transfer chamber coupled with the load lock chamber. The first transfer chamber may include a second transfer robot. The tools may include a second transfer chamber coupled with the first transfer chamber. The second transfer chamber may include a third transfer robot. The tools may include a metal deposition chamber coupled with the transfer chamber.