Integrated Wet Clean Transfer for Low-Temperature Epitaxy

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Solution Overview

Problem

Conventional epitaxial film deposition processes face challenges in achieving high-quality interfacial surfaces due to the inability to remove impurities like carbon, oxygen, chlorine, and fluorine without high-temperature baking, leading to defects and non-uniformity in epitaxial growth, especially with reduced thermal budgets.

Innovation Solution

An integrated cluster tool system with a wet clean system maintained at atmospheric pressure, coupled with load lock chambers and epitaxial growth chambers, allows for rapid substrate processing, including multiple cleaning chemistries and direct transfer to vacuum environments, minimizing exposure time and maintaining low temperatures to preserve substrate quality.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If thermal baking is used to remove impurities, then contaminant removal is improved, but thermal budget is exceeded

Engineering Contradiction:

Improvecontaminant removalVSAvoidthermal budget

Core Design Contradiction:

Object-affected harmful factorsVSTemperature

Solution Approach 1:

The patent changes the cleaning mechanism from thermal-based to chemical-based by introducing wet cleaning chemistries (HF, NH4OH, HCl) that can remove contaminants at low temperatures, thereby resolving the contradiction between effective contaminant removal and thermal budget constraints

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent replaces the thermal baking process with a chemical wet cleaning process, substituting thermal energy with chemical reactions to achieve contaminant removal without exceeding thermal budgets

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

2Loss of time

If substrates are exposed to atmospheric conditions for extended periods, then transfer time is reduced, but contaminant levels increase

Engineering Contradiction:

Improvetransfer timeVSAvoidcontaminant levels

Core Design Contradiction:

Loss of timeVSObject-affected harmful factors

Solution Approach 1:

The patent implements continuous processing where substrates are transferred directly from the wet cleaning chamber to the epitaxial growth chamber without breaking vacuum or exposing to atmosphere, eliminating idle time while maintaining low contaminant levels through uninterrupted vacuum environment

Inventive Principle:

Principle #20Continuity of useful action

Solution Approach 2:

The patent introduces a load lock chamber as an intermediary between the atmospheric environment and the vacuum chambers, allowing substrate transfer while maintaining vacuum integrity and preventing contaminant exposure

Inventive Principle:

Principle #24Intermediary (Mediator)

3Object-affected harmful factors

If multiple cleaning chemistries are used, then contaminant removal is improved, but process complexity increases

Engineering Contradiction:

Improvecontaminant removalVSAvoidprocess complexity

Core Design Contradiction:

Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

The patent segments the cleaning process into three distinct chemical treatment steps (HF for oxide removal, NH4OH for organic removal, HCl for metal removal), with each chemistry targeting specific contaminant types, thereby achieving comprehensive cleaning while maintaining process organization and control

Inventive Principle:

Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The system significantly reduces contaminant levels and time delays, enabling high-quality epitaxial growth with improved uniformity and reduced defects by limiting exposure to atmospheric conditions, achieving contaminant reductions below 5×10^10 atoms/cm² while maintaining temperatures below 700°C.

Implementation Method 1

Processing the substrate in the wet clean chamber may include cleaning the substrate with a first chemistry including hydrofluoric acid. Processing the substrate in the wet clean chamber may include cleaning the substrate with a second chemistry comprising ammonium hydroxide. Processing the substrate in the wet clean chamber may include cleaning the substrate with a third chemistry comprising hydrochloric acid.

Methodology Applied

Scientific EffectChemical cleaning:

Implementation Method 2

epitaxially growing material on the substrate

Methodology Applied

Scientific EffectEpitaxial growth: Epitaxy

Implementation Method 3

epitaxial growth chamber coupled with the transfer chamber

Methodology Applied

Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Data Source

PatentUS12538737B2Integrated wet clean for epitaxial growth

Publication Date: 2026.01.27 APPLIED MATERIALS INC

AI summary

Exemplary integrated cluster tools may include a factory interface including a first transfer robot. The tools may include a wet clean system coupled with the factory interface at a first side of the wet clean system. The tools may include a load lock chamber coupled with the wet clean system at a second side of the wet clean system opposite the first side of the wet clean system. The tools may include a first transfer chamber coupled with the load lock chamber. The first transfer chamber may include a second transfer robot. The tools may include a dry etch chamber coupled with the first transfer chamber. The tools may include a second transfer chamber coupled with the first transfer chamber. The second transfer chamber may include a third transfer robot. The tools may include a process chamber coupled with the second transfer chamber.