Wet Etching Photoelectric Device With Capping Layer
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Solution Overview
Problem
The high manufacturing costs and complexity of dry etching processes for solar cell production, particularly due to the need for expensive equipment and high-energy ion bombardment, hinder the efficient and cost-effective production of solar cells.
Innovation Solution
A photoelectric device and manufacturing method utilizing wet etching with a capping layer that includes insulation materials like silicon oxide or silicon nitride to activate etching reactions, reducing the need for expensive equipment and improving etching efficiency by forming undercuts in the gap insulation layer and selectively patterning semiconductor stacks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If dry etching (reactive ion etching) is used for semiconductor layer patterning, then etching precision and reliability are improved, but manufacturing cost and device complexity increase due to expensive equipment and high-energy ion bombardment requirements
Solution Approach 1:
The patent replaces the mechanical/physical dry etching process (reactive ion etching requiring expensive equipment and high-energy ion bombardment) with a chemical wet etching process. The wet etching uses chemical solutions to achieve the desired etching precision without requiring complex equipment, thereby reducing manufacturing cost and device complexity while maintaining etching precision through controlled chemical reactions and optimized etching solution formulations.
2Device complexity
If wet etching is used for semiconductor layer patterning, then manufacturing cost is reduced by avoiding expensive equipment, but etching rate and productivity are worsened due to slower etching speed
Solution Approach 1:
The patent optimizes wet etching parameters including etching solution composition (using combinations like HF/HNO3/DI water or HF/HNO3/acetic acid), temperature, and concentration to significantly improve etching rate. By adjusting these parameters, the wet etching process achieves productivity levels comparable to or exceeding dry etching while maintaining the advantage of lower equipment cost and simpler manufacturing setup.
3Ease of manufacture
If wet etching is used without optimized structure design, then manufacturing simplicity is improved, but light loss increases and solar cell efficiency is reduced
Solution Approach 1:
The patent implements localized structural optimizations including forming undercuts in the gap insulation layer and selectively patterning semiconductor stacks in specific regions. These local structural modifications are designed to reduce light loss and enhance solar cell efficiency without complicating the overall manufacturing process. The undercut formation and selective patterning create optimal light trapping and electrical field distribution in critical areas while maintaining process simplicity elsewhere.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces manufacturing costs and improves productivity by enabling efficient wet etching of semiconductor stacks, enhancing the etching rate and reducing light loss, thereby increasing solar cell output and efficiency.
Implementation Method 1
wet etching with a capping layer that includes insulation materials like silicon oxide or silicon nitride to activate etching reactions
Data Source
AI summary
A photoelectric device is disclosed. The photoelectric device includes a semiconductor substrate, first and second semiconductor stacks having opposite conductive types and alternately arranged on a first surface of the semiconductor substrate, and a gap insulation layer formed between the first and second semiconductor stacks. An undercut may be formed in the gap insulation layer. A method of manufacturing a photoelectric device is also disclosed.