Wet Etching Nozzle Control for Radial Profile Precision
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Solution Overview
Problem
Conventional semiconductor processing techniques face challenges in achieving complex etching amount distribution during wet etching in single-wafer cleaning, as the swing sequence method is inefficient in controlling etching profiles and requires manual optimization by experienced engineers, making it difficult to precisely adjust etching amounts at specific radial positions on substrates.
Innovation Solution
An etching control system comprising a prediction device that updates and optimizes a model for the relationship between etching amount distribution and process parameters, and an etching control device that acquires and applies these parameters to control nozzle operations, enabling precise control of etching profiles through the dual dispensing process, where two nozzles discharge liquids onto a substrate to create intended etching distributions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the swing sequence method is used for wet etching, then the etching process can be performed, but it is inefficient in controlling etching profiles and requires manual optimization by experienced engineers
Solution Approach 1:
The patent applies parameter changes by systematically varying process parameters (liquid discharge amounts, discharge positions, substrate rotation speed, nozzle positions) to achieve different etching amount distributions. The control device calculates optimal parameter combinations based on target etching profiles, replacing manual trial-and-adjustment with systematic parameter optimization. This resolves the contradiction by enabling precise etching profile control through calculated parameter sets while reducing operational complexity through automated calculation.
Solution Approach 2:
The patent replaces the mechanical/manual optimization process with an automated control system that uses calculation and information processing. The control device computes optimal process parameters based on target etching amount distributions, substituting the need for experienced engineers to manually adjust parameters. This substitution of mechanical/manual operations with automated computational control resolves the contradiction between precision and ease of operation.
2Manufacturing precision
If manual optimization by experienced engineers is used, then etching profiles can be adjusted, but it is difficult to precisely adjust etching amounts at specific radial positions on substrates
Solution Approach 1:
The patent implements feedback by using measured etching amount distribution data to refine and update the relationship model between process parameters and etching outcomes. The control device iteratively improves parameter calculations based on actual measurement results, enabling increasingly precise control of etching amounts at specific radial positions. This feedback mechanism resolves the contradiction by continuously improving both control precision and measurement precision through data-driven model optimization.
Solution Approach 2:
The patent applies preliminary action by pre-calculating optimal process parameters before the etching process begins. The control device computes the required parameter combinations based on target etching amount distributions and stores these for execution. This preliminary calculation approach enables precise control of etching amounts at specific positions by preparing optimized parameters in advance, resolving the contradiction between manufacturing precision and measurement precision.
3Adaptability or versatility
If the dual dispensing process is used with two nozzles, then complex etching amount distributions can be achieved, but the number of process parameters increases
Solution Approach 1:
The patent applies universality by using a single control device that manages multiple nozzles and multiple process parameters through a unified calculation system. The control device calculates coordinated parameters for both nozzles simultaneously based on the target etching distribution, enabling complex etching patterns while centralizing parameter management. This multi-functional control approach resolves the contradiction by handling parameter management complexity through integration while maintaining the ability to achieve complex etching distributions.
Solution Approach 2:
The patent uses the control device as an intermediary that mediates between the target etching distribution requirements and the actual nozzle operations. The control device translates desired etching patterns into coordinated parameter sets for multiple nozzles, managing the complexity of multiple parameters through systematic calculation and coordination. This intermediary function resolves the contradiction by abstracting away parameter management complexity while preserving the ability to achieve complex etching distributions.
Data Source
AI summary
An etching control system includes a prediction device and an etching control device. The prediction device includes an updating unit configured to update, to optimize a model indicating a relationship between distribution of an etching amount within a surface of a substrate and a process parameter, which is a parameter of controlling operations of multiple nozzles configured to etch the substrate, a parameter of the model; a calculator configured to calculate the process parameter corresponding to distribution of a designated etching amount by using the model whose parameter has been updated by the updating unit; and a provider configured to provide the process parameter calculated by the calculator. The etching control device includes an acquisition unit configured to acquire the process parameter; and an operation controller configured to control the operations of the multiple nozzles by using the process parameter acquired by the acquisition unit.