Wet Functionalization of Dielectric Surfaces for Interconnect Adhesion
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Solution Overview
Problem
As semiconductor device dimensions shrink, existing processes struggle to form desired materials and structures within acceptable tolerances, particularly in forming interconnects, due to challenges in nucleation, adhesion, and step coverage of barrier layers and conductive metals.
Innovation Solution
A wet processing method involving a functionalization bath with specific solvents and reactants is used to modify the surface of semiconductor substrates, enhancing the deposition of subsequent layers through electroless plating, electroplating, or chemical vapor deposition by incorporating binding and active functional groups that promote the formation of barrier layers, liners, seed layers, and conductive metals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition processes are used on shrinking semiconductor dimensions, then existing process compatibility is maintained, but nucleation, adhesion, and step coverage of barrier layers and conductive metals deteriorate
Solution Approach 1:
The patent applies preliminary action by introducing a wet chemical functionalization treatment before the main deposition process. This pre-treatment modifies the dielectric surface with specific functional groups that promote subsequent nucleation and adhesion of barrier layers and conductive metals, thereby improving deposition quality without requiring changes to the core deposition equipment or process parameters.
Solution Approach 2:
The patent employs parameter changes by modifying the surface chemistry of the dielectric material through controlled chemical reactions. By adjusting the functionalization bath composition, temperature, and exposure time, the surface is transformed to have enhanced nucleation properties, allowing conventional deposition processes to achieve superior adhesion and step coverage on scaled-down structures.
2Reliability
If new deposition methods are developed to improve nucleation and adhesion, then deposition quality improves, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent uses an intermediary approach by introducing a chemical functionalization layer as a mediator between the dielectric substrate and the barrier/conductive layers. This intermediate treatment creates optimal surface conditions for deposition without requiring complex deposition equipment or multi-step deposition sequences, thereby improving reliability while maintaining manufacturing simplicity.
3Manufacturing precision
If existing processes are used for forming interconnects at scaled dimensions, then process familiarity is maintained, but acceptable tolerances for material formation cannot be achieved
Solution Approach 1:
The patent applies preliminary action by implementing a pre-deposition wet chemical treatment that prepares the dielectric surface for subsequent material formation. This pre-functionalization step ensures that barrier layers and conductive metals nucleate and adhere properly within acceptable tolerances, enabling conventional high-volume manufacturing processes to achieve the precision required for scaled-down interconnect structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the deposition of a wider variety of materials for interconnects, improving nucleation and adhesion, and overcoming previous limitations in manufacturing capabilities, allowing for the formation of high-quality interconnect stacks that were previously unmanufacturable.
Implementation Method 1
a binding functional group that binds the functionalization reactant to the first material
Implementation Method 2
the reducing functional group may include a material selected from the group consisting of: a borohydride, a borane, an aldehyde, an acid, a hypophosphite, hydrazine, a glycol, a reductive metal ion
Implementation Method 3
the catalyzing functional group may include nanoparticles of a metal and/or nanoparticles of a metal oxide
Implementation Method 4
the second material is deposited through electroless plating, electroplating, chemical vapor deposition, or atomic layer deposition
Implementation Method 5
the second material is deposited through electroless plating, electroplating, chemical vapor deposition, or atomic layer deposition
Data Source
AI summary
Various embodiments relate to methods, apparatus, and systems for forming an interconnect structure, or a portion thereof. The method may include contacting the substrate with a functionalization bath comprising a first solvent and a functionalization reactant to form a modified first material, and then depositing a second material on the modified first material through electroless plating, electroplating, chemical vapor deposition, or atomic layer deposition. The first material may be a dielectric material, a barrier layer, or a liner, and the second material may be a barrier layer or a barrier layer precursor, a liner, a seed layer, or a conductive metal that forms the interconnect of the interconnect structure, according to various embodiments.