Wide-Bandgap Semiconductor Capacitor for High-Voltage Integration
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Solution Overview
Problem
Conventional ceramic insulator capacitors are large, incompatible with integration near active devices, create parasitic inductances, and operate within a limited temperature range, making them unsuitable for high-voltage and high-frequency applications in microelectronic circuits.
Innovation Solution
A capacitor with a stack of wide-bandgap semiconductor layers, including an insulating intermediate layer with deep dopants and conductive contact layers forming pn-junctions, allowing for high voltage resistance, reduced dimensions, and wide temperature operation, compatible with microelectronic manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If ceramic insulator capacitors are used to withstand very high voltages, then voltage resistance is improved, but device size increases and integration near active devices becomes difficult
Solution Approach 1:
The patent changes the material parameters by using wide-bandgap semiconductor materials (such as silicon carbide or gallium nitride) with specific bandgap energies greater than 2.3 eV. This material parameter change enables the capacitor to withstand very high voltages (exceeding 1000 V) while maintaining a compact size suitable for integration near active devices, directly resolving the contradiction between voltage resistance and device size.
2Strength
If ceramic insulator capacitors are used for high voltage applications, then voltage resistance is improved, but parasitic inductances increase due to significant distance from active devices
Solution Approach 1:
The patent changes the material parameters to wide-bandgap semiconductors that enable high voltage operation in a compact form factor. This allows the capacitor to be positioned close to active devices, thereby reducing parasitic inductances while maintaining the required voltage resistance through the inherent properties of the wide-bandgap material.
3Strength
If ceramic insulator capacitors are used, then high voltage capability is achieved, but temperature operating range is limited to typically between room temperature and 125° C
Solution Approach 1:
The patent changes the material parameters by selecting wide-bandgap semiconductor materials with bandgap energies greater than 2.3 eV, which inherently possess superior thermal stability. This material parameter change enables the capacitor to maintain its voltage capability across an extended temperature range, overcoming the limitation of conventional ceramic capacitors that are restricted to temperatures between room temperature and 125° C.
4Strength
If conventional ceramic capacitors are used, then high voltage resistance is achieved, but compatibility with microelectronic manufacturing integration is lost
Solution Approach 1:
The patent changes the material parameters to wide-bandgap semiconductors that can be grown and processed using standard microelectronic fabrication techniques. This material parameter change enables monolithic integration of the capacitor with active devices on the same substrate, achieving both high voltage resistance and compatibility with microelectronic manufacturing processes simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The capacitor provides stable, high-voltage resistance and constant capacitance across a wide temperature range, reducing parasitic inductances and enabling integration with active devices, while maintaining reliability and compatibility with microelectronic manufacturing methods.
Implementation Method 1
an electrically insulating intermediate layer having a resistivity greater than 10 kohm·cm and comprising n- or p-type deep dopants producing energy levels located at over 0.4 eV from the conduction band or the valence band of the semiconductor material
Implementation Method 2
the two contact layers, electrically isolated from each other, being arranged on either side of the intermediate layer to form two pn-junctions
Implementation Method 3
semiconductors with a wide bandgap, such as silicon carbide, gallium nitride or diamond... can manage a much higher power density compared to their traditional silicon homologs
Data Source
AI summary
A capacitor comprises a stack of layers made of a semiconductor material having a band gap energy greater than 2.3 eV, the stack of layers comprising: an electrically insulating intermediate layer having a resistivity greater than 10 kohm·cm and comprising n- or p-type deep dopants producing energy levels more than 0.4 eV from the conduction band or the valence band of the semiconductor material, two contact layers having a resistivity less than or equal to 10 kohm·cm and comprising dopants of a type opposite to that of the deep dopants of the intermediate layer, the two contact layers being arranged on either side of the intermediate layer to form two pin junctions.