Wide-Bandgap Semiconductor Printing via Molten Metal Reactive Deposition
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Solution Overview
Problem
Current semiconductor device fabrication methods are limited by the need for complex and costly processes involving thin film deposition, etching, and regrowth, which restrict the development of new device architectures and increase the cost and time required for producing high-power, high-temperature, and radiation-resistant GaN semiconductor devices.
Innovation Solution
The gas-phase reactive additive manufacturing (GRAM) method, which involves depositing a molten metal onto a substrate in an enclosed chamber and reacting it with a gas phase species to form semiconductor materials, allowing for controlled, localized printing and the formation of single-crystal semiconductor materials with reduced dislocation density and elimination of time-intensive etching and regrowth steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional thin film deposition and etching methods are used to form localized GaN semiconductor areas, then device functionality is achieved, but process complexity and manufacturing cost increase significantly
Solution Approach 1:
The invention extracts and eliminates the etching step from the conventional fabrication process. By using selective area growth with patterned substrates or masks during the deposition process itself, the method directly forms localized GaN semiconductor areas without requiring separate etching operations, thereby simplifying the manufacturing process and reducing complexity
Solution Approach 2:
The invention applies preliminary action by preparing the substrate with specific patterns, masks, or nucleation layers before the main deposition process. This preliminary preparation enables direct selective area growth of GaN semiconductor structures, eliminating the need for subsequent etching steps and reducing overall process complexity
2Productivity
If conventional HVPE or MOCVD methods are used to grow GaN semiconductor layers, then high-quality semiconductor material is produced, but production time and manufacturing cost increase
Solution Approach 1:
The invention changes the deposition parameters by using a molten metal source with controlled reactant gas flow, enabling rapid selective area growth of GaN semiconductor material. This parameter change allows the process to achieve high-quality material production faster than conventional HVPE or MOCVD methods, improving productivity while reducing manufacturing time
Solution Approach 2:
The invention maintains continuous useful action by performing selective area growth in a single continuous deposition process without interrupting for etching or regrowth steps. The molten metal source continuously reacts with introduced reactants to form the desired semiconductor structures, maximizing productivity and reducing total manufacturing time
3Adaptability or versatility
If multiple etching and regrowth steps are performed to create complex semiconductor structures, then device architecture flexibility is improved, but manufacturing cost and process time increase
Solution Approach 1:
The invention applies segmentation by using patterned substrates or masks divided into distinct regions that control where GaN semiconductor material grows. This segmentation enables direct formation of complex device architectures with different structures in different areas during a single deposition process, providing architectural flexibility without requiring multiple etching and regrowth cycles
Solution Approach 2:
The invention transitions from a planar 2D process (deposition followed by etching) to a 3D selective area growth process. By controlling growth in the vertical dimension through patterned nucleation sites and reactant distribution, the method directly creates complex three-dimensional semiconductor structures in one step, improving adaptability while simplifying manufacturing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
GRAM enables the rapid production of complex semiconductor structures with improved crystallization rates and reduced costs, facilitating the development of high-power and optoelectronic devices with enhanced performance and reliability.
Implementation Method 1
reacting the molten metal with a gas phase species in the enclosed chamber to form the semiconductor material
Implementation Method 2
a heated stage capable of heating a substrate to a temperature of at least 900° C.
Implementation Method 3
depositing a molten metal onto a substrate in an enclosed chamber to form a trace having a maximum height of 15 micrometers and/or a maximum width of 25 micrometers to 10 millimeters
Data Source
AI summary
A method for printing a semiconductor material includes depositing a molten metal onto a substrate in an enclosed chamber to form a trace having a maximum height of 15 micrometers and/or a maximum width of 25 micrometers to 10 millimeters and/or a thin film having a maximum height of 15 micrometers. The method further includes reacting the molten metal with a gas phase species in the enclosed chamber to form the semiconductor material. The depositing the molten metal includes depositing a metal composition including the molten metal and an etchant or depositing the etchant separate from the molten metal in the enclosed chamber.