Wide-Bandgap Sense Element for Precise Junction Temperature Monitoring
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Solution Overview
Problem
Existing methods for estimating junction temperature in power semiconductor devices are imprecise and require additional effort, leading to inefficiencies in failure detection and reliability.
Innovation Solution
A semiconductor device with a transistor array and a sense element formed from wide bandgap material, incorporating rectifying junctions between a sense pad and a source electrode, allows for precise junction temperature measurement with minimal additional effort and chip area loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If optical methods (optical fibers and infrared thermal imaging) are used to measure junction temperature, then measurement precision is improved, but device complexity and additional effort increase
Solution Approach 1:
The sense element is integrated directly into the power semiconductor device structure, merging the temperature sensing function with the power device. The sense element is formed in the same semiconductor portion as the transistor array, eliminating the need for separate optical fibers or infrared imaging systems, thus reducing device complexity while maintaining measurement precision
Solution Approach 2:
The power semiconductor device structure itself serves as the temperature sensor. The sense element utilizes the device's own semiconductor material and junctions to measure temperature, eliminating the need for external sensing systems and reducing additional effort required for temperature monitoring
2Measurement precision
If electrical parameters (dI/dt, dV/dt, on-state voltage drop) are measured to estimate junction temperature, then measurement precision is improved, but device complexity and additional effort increase
Solution Approach 1:
The device structure itself provides the temperature measurement function through integrated sense elements that directly sense temperature at the junction, eliminating the need for complex electrical parameter measurements and external monitoring systems
Solution Approach 2:
The patent replaces complex electrical parameter measurement methods with a direct physical sensing approach using semiconductor junctions that naturally respond to temperature changes through their electrical characteristics, simplifying the measurement process while improving precision
3Measurement precision
If a sense element is integrated into the power semiconductor device, then measurement precision is improved, but chip area is reduced
Solution Approach 1:
The sense element is implemented using the same semiconductor material and junction structures as the power device, utilizing local regions of the chip that can serve dual purposes. The sense element is formed in the semiconductor portion alongside the transistor array, allowing temperature sensing without requiring separate dedicated areas, thus minimizing chip area loss
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables accurate, in-situ temperature monitoring of power semiconductor devices, reducing device-specific variations and enhancing failure detection precision.
Implementation Method 1
A sense element formed from the wide bandgap material includes at least one rectifying junction electrically connected between the sense pad and the source electrode
Data Source
AI summary
A semiconductor device includes a transistor array and a sense pad. The transistor array includes a plurality of transistor cells electrically connected in parallel between a source electrode and a drain structure. The drain structure is formed in a semiconductor portion based on a single-crystalline wide bandgap material. A sense element formed from the wide bandgap material includes at least one rectifying junction electrically connected between the sense pad and the source electrode.