Wide Main Terminal Plating Structure for Durable Semiconductor Bonding
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices face challenges in improving the durable life of main terminals due to electric field concentration and potential defects caused by residual plating solution during the bonding process.
Innovation Solution
A semiconductor device configuration with a wide terminal having a non-bonded region adjacent to the bonded region, where the plating film covers the solid-state bonded portion, suppressing electric field concentration and preventing plating solution residue by allowing easy discharge of the solution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a narrow terminal is used for bonding, then the bonding area is reduced, but electric field concentration occurs at the bonded portion reducing durable life
Solution Approach 1:
The patent extends the terminal width in the overlapping region beyond the bonded region, creating a dimensional transition from narrow to wide structure. This width variation in the overlapping region disperses the electric field concentration that would otherwise occur at the narrow bonded portion, thereby improving durable life while maintaining adequate bonding area
2Manufacturing precision
If plating film is applied to cover the bonded portion, then appearance quality is improved, but plating solution residue may remain causing defects
Solution Approach 1:
The overlapping region is designed with a width greater than the bonded region, creating a lateral extension that serves as an overflow channel. This dimensional design allows plating solution to flow laterally outward from the bonded portion through the wider overlapping region, preventing residue accumulation while still allowing complete plating film coverage for appearance quality
Solution Approach 2:
The patent separates the functions of the overlapping region into two distinct zones: the bonded region for mechanical/electrical connection and the extended non-bonded portion of the overlapping region that acts as an extraction path for plating solution, removing the harmful residue before it can accumulate
3Reliability
If the terminal width is increased, then electric field concentration is suppressed, but the bonding area may be insufficient
Solution Approach 1:
The overlapping region is segmented into two functional zones: a bonded region that provides adequate bonding area for mechanical and electrical connection, and an extended non-bonded region that provides additional width for electric field dispersion. This segmentation allows each zone to fulfill its specific function without compromise
Solution Approach 2:
The terminal structure transitions from a uniform narrow width to a variable width structure where the overlapping region extends wider than the bonded region. This dimensional change creates sufficient bonding area in the bonded region while the extended width in the overlapping region suppresses electric field concentration
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The configuration enhances the durable life of the main terminal while preventing defects from plating solution residue, maintaining reliable connections between the semiconductor element and the front surface metal body.
Implementation Method 1
The main terminal has a solid-state bonded portion bonded to the front surface metal body
Implementation Method 2
The plating film is disposed on the front surface metal body and the main terminal so as to cover the solid-state bonded portion
Data Source
AI summary
A semiconductor device includes a semiconductor element, a substrate, a bonding material, a main terminal and a plating film. The substrate has an insulating base member, a front surface metal body on a front surface of the insulating base member and electrically connected to a main electrode of the semiconductor element, and a back surface metal body on a back surface of the insulating base member. The bonding material is interposed between the main electrode and the front surface metal body. The main terminal has a solid-state bonded portion bonded to the front surface metal body. The plating film is disposed on the front surface metal body and the main terminal to cover the solid-state bonded portion. The main terminal includes a wide terminal having one solid-state bonded portion and having an overlapping region a width of which is greater than the solid-state bonded portion.