Widening Channel Gas Flow Guide for ALD Uniformity
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing atomic layer deposition (ALD) apparatuses face challenges in achieving uniform thin film deposition on non-planar substrates due to position-dependent non-uniformity and inefficiencies in reactant gas supply, leading to increased deposition time and wasted reactants.
Innovation Solution
The ALD apparatus features a gas flow control guide structure with widening channels that generate non-uniform laminar flow, providing different amounts of reactant gases across the substrate surface, and a reactor base driver for precise sealing of the reaction space, optimizing reactant distribution and deposition efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If uniform reactant gas supply is used across the substrate surface, then deposition uniformity is improved, but deposition time increases and reactant waste increases
Solution Approach 1:
The gas flow control guide structure implements local quality by providing different amounts of reactant gases to different regions of the substrate surface. The widening channels create non-uniform laminar flow that delivers higher reactant concentration to regions that need it, optimizing both deposition uniformity and efficiency
Solution Approach 2:
The patent changes the physical parameters of gas flow by using widening channels that transition from narrow to wide cross-sections. This parameter change creates controlled non-uniform flow patterns that optimize reactant distribution across the substrate, reducing deposition time while maintaining film uniformity
2Device complexity
If standard gas channels are used, then device complexity is reduced, but deposition uniformity on non-planar substrates deteriorates
Solution Approach 1:
The gas flow control guide structure implements local quality by providing different amounts of reactant gases to different regions of the substrate surface. The widening channels create non-uniform laminar flow that delivers higher reactant concentration to regions that need it, optimizing both deposition uniformity and efficiency
Solution Approach 2:
The patent introduces a new dimension to gas supply by using channels with varying cross-sections along their length. This dimensional change in channel geometry creates the necessary flow non-uniformity to handle non-planar substrates, achieving uniform deposition without excessive complexity
3Manufacturing precision
If excess reactant gas is supplied to ensure saturation, then deposition quality is improved, but reactant waste increases
Solution Approach 1:
The gas flow control guide structure implements local quality by providing different amounts of reactant gases to different regions of the substrate surface. The widening channels create non-uniform laminar flow that delivers higher reactant concentration to regions that need it, optimizing both deposition uniformity and efficiency
Solution Approach 2:
The system achieves self-service by using the widening channel geometry to automatically regulate reactant distribution. The flow dynamics self-adjust to provide appropriate reactant amounts to different substrate regions without external control, reducing waste while ensuring complete surface saturation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces deposition time and reactant waste while ensuring uniform thin film thickness across non-planar substrates, enhancing the productivity and sealing efficiency of the ALD process.
Implementation Method 1
providing different amounts of reactant gases across the substrate surface, and a reactor base driver for precise sealing of the reaction space, optimizing reactant distribution and deposition efficiency
Implementation Method 2
an apparatus for growing thin films on a surface of a substrate. More particularly, the present invention relates to an apparatus for producing thin films on a surface of a substrate by subjecting the substrate to alternately repeated surface reactions of vapor-phase reactants
Data Source
AI summary
A reactor configured to subject a substrate to alternately repeated surface reactions of vapor-phase reactants is disclosed. The reactor may include a reaction chamber that defines a reaction space and a gas flow control guide structure; and a substrate holder. The gas flow control guide includes one or more channels. Each of the channels widens as the channel extends from the inlet to the reaction space. At least one of the channels is configured to generate a non-uniform laminar flow at a first portion of the periphery of the reaction space such that the laminar flow includes a plurality of flow paths that provide different amounts of a fluid. The reaction chamber may include a reactor base and a reactor cover detachable from each other; and a driver configured to independently adjust at least three portions of the reactor base to provide a substantially perfect seal to the reactor space.