Semiconductor Wire-Bond Bump Structure to Prevent Short Circuits
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Solution Overview
Problem
In semiconductor devices, the difference in source voltage between the control element and the drive element leads to a potential difference in their conductive paths, necessitating an insulating element to prevent electric breakdown. However, this configuration risks short circuits due to wire bonding, especially when wires make contact with the edges of semiconductor elements.
Innovation Solution
The semiconductor device incorporates a bump structure where a bump is electrically bonded to an electrode of a semiconductor element, with a pillar portion protruding from the disc portion of the bump. The second bonding portion of the wire is electrically bonded to the pillar portion, ensuring the wire is inclined and further away from the semiconductor element, thus preventing short circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an insulating element is interposed between the control element and the drive element to prevent electric breakdown, then electrical insulation is improved, but the risk of short circuit between wires and semiconductor elements increases due to wire bonding requirements
Solution Approach 1:
The patent introduces a bump structure as an intermediary component between the wire bonding portion and the semiconductor element. This bump serves as a mediator that provides both electrical connection and physical spacing, allowing the wire to be electrically connected while maintaining a safe distance from the semiconductor element edge, thus resolving the short circuit risk introduced by the insulating element configuration
Solution Approach 2:
The patent utilizes the vertical dimension by making the bump protrude in the thickness direction of the semiconductor element. This dimensional approach allows the wire bonding portion to contact the bump at a height above the semiconductor element surface, creating vertical separation that prevents horizontal short circuits while maintaining electrical connectivity
2Reliability
If wires are bonded directly to semiconductor elements for electrical connection, then electrical connectivity is improved, but short circuit risk increases when wires contact the edges of semiconductor elements
Solution Approach 1:
The bump structure acts as an intermediary bonding target for the wire. Instead of the wire contacting the semiconductor element directly, it bonds to the protruding bump which is electrically connected to the semiconductor element's electrode. This intermediary structure maintains electrical connectivity while preventing direct contact between the wire and the semiconductor element edge
Solution Approach 2:
The bonding structure is segmented into two distinct parts: the semiconductor element surface and the protruding bump. This segmentation separates the electrical connection function (performed by the bump) from the structural support function (performed by the semiconductor element), allowing the wire to bond to the bump without risking contact with the semiconductor element edge
Data Source
AI summary
A semiconductor device includes a first wire, a first semiconductor element including an electrode electrically connected to the first wire, and a bump electrically bonded to the electrode. The first wire includes a first bonding portion located at one end and a second bonding portion located at another end. The bump includes a disc portion in contact with the electrode, and a pillar portion protruding from the disc portion in a first direction. The second bonding portion is electrically bonded to the pillar portion. A dimension of the pillar portion in the first direction increases as approaching the first bonding portion.


