Wire-Bond Cooling Channels for High-Power Semiconductor Dies

The patent merges the cooling channel structure directly into the semiconductor die by bonding metal wires to the metallized layer and forming channels within the die substrate itself. This integration eliminates the need for separate cold plates, heat sinks, and thermal interface materials, as the cooling function is now inherent to the die structure. The metal wires serve dual purposes as both electrical connections and cooling channel boundaries.

The metal wires bonded to the metallized layer serve multiple functions simultaneously: they provide electrical connectivity to the semiconductor circuitry and define the boundaries of cooling channels. This multi-functionality reduces the number of separate components needed, as the same structural elements perform both electrical and thermal management roles.

The patent applies different wire bonding characteristics to different regions of the die based on local heat generation patterns. Wire density, wire height, wire diameter, and wire material can be varied across different areas of the metallized layer to match the thermal profile of the semiconductor circuitry. This localized optimization allows precise thermal management without requiring uniform high-precision bonding across the entire die.

The invention allows variation of multiple wire bonding parameters including wire density, wire height, wire diameter, and wire material composition across different regions of the die. These parameter changes enable the cooling channel geometry to be optimized for local thermal conditions while maintaining manufacturability through standard wire bonding process capabilities.