Wire-Bond Pad and Flip-Chip Bump Layout for Flexible Packaging
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Solution Overview
Problem
Existing semiconductor packaging technologies face challenges in efficiently integrating both wire bonding and flip-chip bonding within the same package, particularly in ensuring reliable electrical connections and flexibility in packaging configurations.
Innovation Solution
The development of wafer-level semiconductor structures that incorporate both wire-bond pads and flip-chip bumps with electrically conductive surfaces, where a polymer layer is deposited over the wire-bond pads and etched to expose the conductive surfaces, allowing for wafer-level testing before singulation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If both wire bonding and flip-chip bonding are integrated within the same package, then packaging flexibility and electrical connection reliability are improved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The bonding structures are segmented into distinct wire-bond pads and flip-chip bumps, each with dedicated functional zones. The wire-bond pads extend through the passivation layer to enable wire bonding, while flip-chip bumps are formed in separate regions for flip-chip bonding, allowing independent optimization of each bonding type without interference
Solution Approach 2:
Different regions of the semiconductor device are assigned different local properties: wire-bond pad regions have conductive surfaces exposed through passivation for wire bonding, while flip-chip bump regions have protruding conductive structures for flip-chip bonding. This local differentiation enables dual bonding techniques to coexist on the same device
2Manufacturing precision
If wire-bond pads are covered with passivation layers during flip-chip bump formation, then manufacturing precision is improved, but accessibility of conductive surfaces for wire bonding deteriorates
Solution Approach 1:
Wire-bond pads are pre-formed and extend through the passivation layer before flip-chip bump formation. This preliminary positioning ensures that the conductive surfaces remain accessible for wire bonding while the device undergoes subsequent processing steps including flip-chip bump formation
Solution Approach 2:
The passivation layer acts as an intermediary that protects the wire-bond pads during manufacturing while maintaining controlled access. The layer is designed with specific thickness and pattern to protect underlying structures during flip-chip bump formation while allowing wire-bond pad surfaces to remain accessible through carefully designed openings or extensions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables effective screening for potential damage caused by CMOS fabrication processes and high temperatures, providing flexibility in packaging configurations and ensuring reliable electrical connections.
Implementation Method 1
a polymer layer formed over a surface of the semiconductor structure
Implementation Method 2
etched to expose a first electrically conducting surface of the wire-bond pad and an intermediate electrically conducting surface of the flip-chip bond pad
Data Source
AI summary
A semiconductor structure may include a wire-bond pad including a first electrically conducting surface, a flip-chip bump including a second electrically conducting surface, a polymer layer formed over a surface of the semiconductor structure, wherein the first electrically conducting surface of the wire-bond pad is located under a first opening in the polymer layer, and wherein the flip-chip bump extends through a second opening in the polymer layer.