Semiconductor Wire Bond Structure for Pad-Gap Dielectric Strength
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Solution Overview
Problem
Semiconductor devices used in inverters for electric and hybrid vehicles face challenges in maintaining adequate dielectric strength due to voltage differences between control and drive elements, which can lead to reduced insulation effectiveness.
Innovation Solution
A semiconductor device configuration featuring a first and second die pad with different potentials, an insulating element for signal transmission between the circuits, and specific wire structures that bridge the pad gap with controlled inclination angles to enhance dielectric strength, while a sealing resin covers and insulates the components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If semiconductor elements are mounted within a single package with different source voltages, then integration is improved, but dielectric strength deteriorates
Solution Approach 1:
The wire structure transitions from a planar arrangement to a three-dimensional configuration with upright, inclined, extended, and bent sections. This spatial arrangement in multiple dimensions allows the wire to bridge the pad gap while maintaining adequate insulation distance, resolving the conflict between integration and dielectric strength.
Solution Approach 2:
The insulating element serves as an intermediary component mounted on the specific die pad, providing electrical insulation between the first and second circuits while allowing signal transmission. This mediator enables integration of different voltage circuits while preserving dielectric strength.
2Ease of operation
If the wire bridges across the pad gap directly, then connection is improved, but insulation integrity deteriorates
Solution Approach 1:
The wire is configured with upright, inclined, extended, and bent sections that create a three-dimensional path across the pad gap. This multi-dimensional routing maintains connection functionality while preserving insulation integrity by avoiding direct horizontal bridging.
Solution Approach 2:
The wire's geometric parameters are specifically designed with controlled inclination angles and section lengths. The inclination angle of the extended section is smaller than that of the inclined section, creating optimal spacing that maintains insulation while ensuring electrical connection.
3Length of moving object
If the inclination angle of the wire is increased, then bridging capability is improved, but deformation risk increases
Solution Approach 1:
The wire is divided into multiple functional sections (upright, inclined, extended, bent) rather than being a single straight element. This segmentation allows each section to have optimized characteristics, with the extended section providing a low-inclination stable bridge and other sections handling connection transitions.
Solution Approach 2:
Different sections of the wire have different inclination angles, with the extended section having a smaller inclination angle for stability and reduced deformation risk, while other sections have larger angles to achieve necessary bridging and connection.
Data Source
AI summary
A semiconductor device includes first and second circuits, and an insulator relaying signals between the first and second circuits. The first circuit includes a first pad and a first semiconductor mounted on the first pad. The second circuit includes a second pad and a second semiconductor mounted on the second pad. The insulator may be mounted on the first pad. The semiconductor device further includes wire bonded to the insulator and second semiconductor. The wire includes an upright, inclined and extended sections. The upright section rises from the insulator along a thickness direction of the first pad. The inclined section is inclined relative to the thickness direction, extending from the second semiconductor toward the insulator. The extended section is between the upright and the inclined sections. The inclination angle of the extended section to a plane perpendicular to the thickness direction is smaller than that of the inclined section.


