Wire Bond Pad Oxide Layer for Contamination Protection

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Solution Overview

Problem

The complexity of semiconductor device manufacturing processes leads to deficiencies, particularly in protecting bonding pads from oxidation and contamination, and providing mechanical support to wire bonds, which affects device performance.

Innovation Solution

A semiconductor device with a metal oxide layer, such as tantalum or tantalum nitride, is deposited over the bonding pad, and a wire bond penetrates through this layer to bond with the pad, ensuring the pad is entirely covered and protected from oxidation and contamination, while the metal oxide layer provides mechanical support to the wire bond.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a wire bond is directly bonded to the bonding pad, then the bonding process is simple, but the bonding pad is exposed to oxidation and contamination

Engineering Contradiction:

Improvebonding process simplicityVSAvoidoxidation and contamination of bonding pad

Core Design Contradiction:

Ease of manufactureVSObject-affected harmful factors

Solution Approach 1:

A metal oxide layer is deposited over the bonding pad before the wire bond is attached. This preliminary protective layer prevents oxidation and contamination of the bonding pad during subsequent manufacturing steps while still allowing the wire bond to be attached through the layer.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The metal oxide layer acts as an intermediary between the bonding pad and the wire bond. It provides mechanical support to the wire bond and protects the bonding pad from direct exposure to harmful environmental factors while maintaining electrical connectivity.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Ease of operation

If the bonding pad is exposed for wire bond attachment, then the bonding process is straightforward, but the bonding pad lacks mechanical support

Engineering Contradiction:

Improvewire bond attachment easeVSAvoidmechanical support to wire bond

Core Design Contradiction:

Ease of operationVSStrength

Solution Approach 1:

The structure combines the metal oxide layer with the wire bond and bonding pad to create a composite system. The metal oxide layer provides mechanical strength and support to the wire bond, while the bonding pad provides electrical connectivity, creating a system with enhanced overall performance.

Inventive Principle:

Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution enhances the performance of semiconductor devices by preventing oxidation and contamination of the bonding pads and providing mechanical support to the wire bonds, thereby improving the manufacturing process and device reliability.

Implementation Method 1

a metal oxide layer, such as tantalum or tantalum nitride, is deposited over the bonding pad

Methodology Applied

Scientific EffectPhysical Vapour Deposition: Physical Vapour Deposition

Data Source

PatentUS11830836B2Semiconductor device with wire bond and method for preparing the same

Publication Date: 2023.11.28 NAN YA TECH

AI summary

A semiconductor device includes a semiconductor substrate having a bonding pad, and a first dielectric layer disposed over the semiconductor substrate. A portion of the bonding pad is exposed by the first dielectric layer. The semiconductor device also includes a metal oxide layer disposed over the portion of the bonding pad, and a wire bond penetrating through the metal oxide layer to bond to the bonding pad. The portion of the bonding pad is entirely covered by the metal oxide layer and the wire bond.