Wire-Shaped LED Structure With Resistive Layer Against Leakage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The axial structure of light-emitting diodes faces challenges in preventing parasitic deposition on lateral surfaces, leading to leakage currents and reduced efficiency, as existing methods struggle to accurately stack semiconductor portions without electrical contact and subsequent current loss.
Innovation Solution
An optoelectronic device with a substrate supporting first and second light-emitting diodes, each featuring a semiconductor portion doped to specific types, an active portion, and an electrically resistive layer with higher resistance than the active portion, which covers lateral surfaces to prevent parasitic deposition and ensure electrical insulation, thereby preventing short-circuits and enhancing efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If methods are used to form the active portion and second semiconductor portion by covering the first semiconductor portion, then the axial structure is achieved, but parasitic deposition occurs on lateral faces causing leakage currents
Solution Approach 1:
An electrically resistive layer is formed on the first semiconductor portion before forming the active portion and second semiconductor portion. This preliminary action prevents parasitic deposition from creating electrical contact between the first and second semiconductor portions, thereby preventing leakage currents while maintaining the axial structure manufacturing process.
Solution Approach 2:
The electrically resistive layer acts as an intermediary between the first semiconductor portion and the active portion/second semiconductor portion. This intermediate layer blocks the harmful parasitic deposition pathway while allowing the manufacturing process to proceed, thus resolving the contradiction between ease of manufacture and electrical insulation reliability.
2Reliability
If electron barrier layers are deposited after the active portion is formed, then some leakage is prevented, but the barrier is insufficient on lateral faces allowing current leakages
Solution Approach 1:
The electrically resistive layer is applied before the active portion formation, ensuring complete coverage of lateral surfaces from the outset. This preliminary protective measure eliminates the need for subsequent barrier layer deposition, reducing device complexity while maintaining reliable leakage prevention.
3Object-affected harmful factors
If chemical passivation is applied to lateral surfaces, then oxidation is prevented, but electrical insulation against leakage currents is insufficient
Solution Approach 1:
The electrically resistive layer is formed from a material that provides both chemical passivation (preventing oxidation) and electrical insulation (blocking leakage currents). This composite functionality in a single layer simultaneously addresses both protection requirements without the limitations of separate passivation layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces current leakages and increases the efficiency of light-emitting diodes by preventing parasitic deposition on lateral surfaces, ensuring that electronic current passes through the active portion, thus improving the overall performance of axial structure light-emitting diodes.
Implementation Method 1
an electrically resistive layer whose electrical resistance is greater than that of the active portion, covering at least all or part of the lateral surfaces of the first semiconductor portion
Data Source
AI summary
An optoelectronic device includes first and second light-emitting diodes, each LED having: a first semiconductor portion, with a first type of doping, having a wire-like shape along an axis and having side surfaces parallel to this axis; an active portion arranged at least partially on a top end of the first portion; and a second semiconductor portion, with a second type of doping, arranged at least partially on all or part of the active portion. The optoelectronic device further includes an electrically resistive layer having an electrical resistance that is higher than that of the active portion, covering at least all or part of the side surfaces of the first portion and all or part of the surface of the top end of the first portion not covered by the active portion. The resistive layers of the first and second LEDs are separated from one another.


