Wirebond-Free Power Semiconductor Package for Low Inductance Cooling

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Solution Overview

Problem

The packaging technology for power semiconductor devices limits heat dissipation and current handling capabilities, particularly due to stray inductance and the use of wirebonds, which restricts the performance of high-performance devices like silicon carbide power semiconductor dies.

Innovation Solution

A power semiconductor package design featuring leads with exposed heat exchanging portions on both sides of the housing and large electrical contact areas on the leads for improved heat dissipation and current handling, eliminating wirebonds to reduce stray inductance and enhance performance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If traditional packaging with wirebonds is used, then device complexity is reduced, but stray inductance increases and current handling capability deteriorates

Engineering Contradiction:
Improvecurrent handling capabilityVSAvoidpackaging structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent removes wirebonds from the packaging structure, eliminating the intermediate connection element between leads and semiconductor die. This extraction of the wirebond component directly reduces stray inductance and simplifies the current path, allowing direct solder connection between leads and die contact pads.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent merges the electrical connection function and mechanical support function into the lead structure itself. The leads are directly coupled to the semiconductor die contact pads, combining what were previously separate functions (wirebond for electrical connection, lead frame for mechanical support) into a unified direct-connection architecture.

Inventive Principle:
Principle #5Merging (Combining)

2Temperature

If heat exchanging portions are exposed on both sides of housing, then heat dissipation is improved, but device complexity increases

Engineering Contradiction:
Improveheat dissipationVSAvoidpackaging structure
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The patent transitions from single-sided heat dissipation (heat exchanging portion exposed on bottom only) to dual-sided heat dissipation (heat exchanging portions exposed on both top and bottom). This dimensional change in thermal management architecture doubles the available heat exchange surface area, significantly improving heat dissipation capability.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Reliability

If electrical contact portion area is increased to at least 7.5 mm2, then current handling capability is improved, but footprint area increases

Engineering Contradiction:
Improvecurrent handling capabilityVSAvoidpackage footprint
Core Design Contradiction:
ReliabilityVSArea of stationary object

Solution Approach 1:

The patent concentrates the current handling capability enhancement at specific locations (the electrical contact portions of the leads) rather than uniformly increasing the entire package footprint. By providing at least 7.5 mm2 of exposed electrical contact area on the leads where it is most needed for PCB connection, the design achieves high current capability without proportionally increasing overall package size.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design improves heat dissipation and current handling capabilities, reduces stray inductance, and increases the switching speed of power semiconductor packages, enabling them to conduct higher currents while maintaining reliability and adhering to compact packaging standards.

Implementation Method 1

The first lead includes a heat exchanging portion exposed on the top side of the housing... the heat dissipation of the power semiconductor package is improved

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

heat exchanging portion exposed on the top side of the housing... heat exchanging portion exposed on the bottom side of the housing

Methodology Applied
Scientific EffectConvection: Convection

Data Source

PatentUS12199045B2Power semiconductor package with improved performance
Publication Date: 2025.01.14 WOLFSPEED INC
  • US12199045B2 patent drawing
  • US12199045B2 patent drawing
  • US12199045B2 patent drawing

AI summary

A power semiconductor package includes a power semiconductor die, a housing, a first lead, and a second lead. The housing includes a top side and a bottom side. The first lead is in contact with a first electrical contact of the power semiconductor die. Further, the first lead includes a heat exchanging portion on the top side of the housing and an electrical contact portion on the bottom side of the housing. At least 7.5 mm2 of the electrical contact portion of the first lead is available for contacting a printed circuit board. The second lead is in contact with a second electrical contact of the power semiconductor die. The second lead includes a heat exchanging portion on the bottom side of the housing and an electrical contact portion also on the bottom side of the housing.