Wired Under-Bump Structure for Simpler Wafer-Level Packaging

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Solution Overview

Problem

The challenge in semiconductor device manufacturing is integrating a large number of electronic devices into a single silicon wafer while maintaining product yield and reliability, as the packaging process becomes increasingly complex and costly.

Innovation Solution

A semiconductor device with a wired under-bump structure is formed using a redistribution layer (RDL) that includes interconnect segments with wiring pad, under-bump, and trace portions, connected by bond wires and ball connectors, encapsulated by a non-conductive layer, allowing for wafer-level packaging and reduced manufacturing costs.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If a large number of electronic devices are integrated into a single silicon wafer, then device functionality and compactness are improved, but manufacturing complexity and cost increase

Engineering Contradiction:
Improvedevice functionalityVSAvoidmanufacturing complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent divides the wafer into multiple individual die units, each capable of independent packaging. The redistribution layer is segmented into separate interconnect segments for each die, allowing parallel processing and simplified manufacturing of individual packaged devices while maintaining high functionality through integration of multiple dies on the wafer.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent transitions from traditional two-dimensional packaging to three-dimensional wiring under bump structures. By routing interconnect segments underneath the bump structures rather than on the surface, the design adds a vertical dimension to interconnection, reducing surface complexity and enabling more compact device integration.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Ease of manufacture

If traditional packaging processes are used, then manufacturing simplicity is maintained, but product yield and reliability deteriorate

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidproduct yield
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The patent performs preliminary actions by forming the redistribution layer and interconnect segments on the wafer before individual die packaging. The under-bump wiring is established in advance during wafer-level processing, so that when dies are separated and packaged, the interconnection structure is already in place, simplifying subsequent packaging steps while ensuring reliable connections.

Inventive Principle:
Principle #10Preliminary action

3Reliability

If complex packaging processes are implemented, then product reliability is improved, but manufacturing cost increases

Engineering Contradiction:
Improveproduct reliabilityVSAvoidmanufacturing cost
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent merges multiple manufacturing steps into a unified wafer-level process. The redistribution layer formation, interconnect segment creation, and under-bump wiring are combined into a single integrated fabrication sequence performed on the entire wafer before die separation. This consolidation reduces the total number of process steps, lowers manufacturing costs, while maintaining high reliability through controlled wiring structures.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS12588538B2Semiconductor device having wired under bump structure and method therefor
Publication Date: 2026.03.24 NXP BV
  • US12588538B2 patent drawing
  • US12588538B2 patent drawing
  • US12588538B2 patent drawing

AI summary

A method of manufacturing a semiconductor device is provided. The method includes forming a redistribution layer (RDL) over an active side of a semiconductor die. A die pad of the semiconductor die is connected to an interconnect segment of the RDL by way of a bond wire. An encapsulating layer is formed over the active side of the semiconductor die such that exposed portions of the die pad and the bond wire are embedded in the encapsulating layer.