Wiring Structure Air Gap Formation for Low Parasitic Capacitance
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Solution Overview
Problem
As semiconductor devices become highly integrated, the reduced distance between wiring structures increases parasitic capacitance, necessitating a wiring structure with low resistance and low parasitic capacitance.
Innovation Solution
A wiring structure is developed with a first insulation layer, multiple wiring patterns including a metal layer and barrier layer, and a protection layer with high oxygen reactivity, featuring an air gap between the patterns, achieved through UV pre-treatment and plasma treatment processes, using materials like aluminum nitride and cobalt.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the distance between wiring structures is reduced to achieve high integration, then device integration density is improved, but parasitic capacitance increases
Solution Approach 1:
The patent extracts the harmful dielectric material between adjacent wiring patterns and replaces it with an air gap. By removing the solid insulation layer in specific regions and forming air spaces, the parasitic capacitance between wiring patterns is reduced while maintaining the high integration density achieved through reduced wiring spacing.
Solution Approach 2:
The patent introduces air gaps (porous structure) between wiring patterns to reduce parasitic capacitance. The air gap acts as a low-dielectric constant region that minimizes electrical coupling between adjacent conductors, allowing higher integration without proportionally increasing capacitance.
2Object-generated harmful factors
If an air gap is formed between wiring patterns to reduce parasitic capacitance, then parasitic capacitance is reduced, but the wiring structure becomes more complex
Solution Approach 1:
The patent applies preliminary protective actions by forming a protection layer pattern on the wiring patterns before creating the air gap. This protection layer prevents corrosion and damage during the air gap formation process, simplifying the overall manufacturing by pre-preventing potential defects rather than requiring complex repair or rework steps.
Solution Approach 2:
The protection layer pattern acts as an intermediary between the wiring pattern and the air gap formation process. It mediates the interaction by providing a protective barrier that allows the air gap to be formed without directly exposing the wiring pattern to corrosive environments or mechanical damage during manufacturing.
3Reliability
If a protection layer pattern is formed on wiring patterns to prevent corrosion during air gap formation, then reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The patent merges the protection layer formation with the existing manufacturing process flow by integrating it into the insulation layer formation sequence. The protection layer pattern is formed as part of the same process stack, combining protective functionality with the insulating structure rather than requiring separate, additional manufacturing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The structure achieves low resistance and reduced parasitic capacitance, enhancing the reliability and stability of highly integrated semiconductor devices by minimizing corrosion and damage during the air gap formation process.
Implementation Method 1
A UV pre-treatment process may be performed using UV and a reducing gas on the metal layer pattern and the barrier layer pattern to remove the first and second oxide layers thereon
Implementation Method 2
A UV pre-treatment process may be performed using UV and a reducing gas on the metal layer pattern and the barrier layer pattern to remove the first and second oxide layers thereon
Implementation Method 3
The protection layer pattern may cover a top surface of each of the wiring patterns and including a material having a high reactivity with respect to oxygen
Data Source
AI summary
A wiring structure includes a first insulation layer, a plurality of wiring patterns, a protection layer pattern and a second insulation layer. The first insulation layer may be formed on a substrate. A plurality of wiring patterns may be formed on the first insulation layer, and each of the wiring patterns may include a metal layer pattern and a barrier layer pattern covering a sidewall and a bottom surface of the metal layer pattern. The protection layer pattern may cover a top surface of each of the wiring patterns and including a material having a high reactivity with respect to oxygen. The protection layer pattern may cover a top surface of each of the wiring patterns and including a material having a high reactivity with respect to oxygen.