Multilayer Wiring Air-Gap Structure With Bonding Strength Support

Solution Overview

Problem

Conventional techniques for reducing warping in semiconductor devices do not address the mechanical strength needed to withstand forces during processes like Cu--Cu bonding or plasma bonding.

Innovation Solution

A semiconductor device with a multilayered wiring structure that includes insulation and diffusion prevention layers, alternating gaps, and support sections to enhance mechanical strength.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If material between wirings is removed to provide air gap, then capacitance between wirings is reduced, but mechanical strength is insufficient

Engineering Contradiction:

Improvecapacitance between wiringsVSAvoidmechanical strength

Core Design Contradiction:

Loss of energyVSStrength

Solution Approach 1:

The patent applies local quality by creating air gaps in specific regions between wirings where capacitance reduction is most needed, while maintaining solid insulation layers in other regions to provide mechanical strength. This selective removal of insulation material allows different parts of the structure to have different dielectric properties - air gaps for low capacitance and solid insulation for structural support.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The patent employs composite material structure by combining air (dielectric constant 1) with solid insulation materials (higher dielectric constant) in a multilayer wiring structure. This composite approach allows the device to achieve both low capacitance in critical areas and sufficient mechanical strength through the solid insulation components, effectively resolving the contradiction between energy loss reduction and strength maintenance.

Inventive Principle:

Principle #40Composite materials

2Reliability

If air gap is introduced to reduce capacitance, then wiring performance is improved, but device cannot withstand forces during bonding processes

Engineering Contradiction:

Improvewiring performanceVSAvoidmechanical strength for bonding

Core Design Contradiction:

ReliabilityVSStrength

Solution Approach 1:

The patent applies local quality by creating air gaps in specific regions between wirings where capacitance reduction is most needed, while maintaining solid insulation layers in other regions to provide mechanical strength. This selective removal of insulation material allows different parts of the structure to have different dielectric properties - air gaps for low capacitance and solid insulation for structural support.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The patent employs composite material structure by combining air (dielectric constant 1) with solid insulation materials (higher dielectric constant) in a multilayer wiring structure. This composite approach allows the device to achieve both low capacitance in critical areas and sufficient mechanical strength through the solid insulation components, effectively resolving the contradiction between energy loss reduction and strength maintenance.

Inventive Principle:

Principle #40Composite materials

Data Source

PatentUS12538603B2Semiconductor device, solid-state imaging device, and method of manufacturing semiconductor device

Publication Date: 2026.01.27 SONY SEMICON SOLUTIONS CORP

AI summary

A semiconductor device includes: a multilayered wiring layer including an insulation layer (30) and a diffusion prevention layer (21, 22, 23, 24) stacked alternately and including a wiring layer (11, 12, 13) internally; a gap section (50) disposed at least in a portion of the insulation layer (30); and a support section (60) disposed at least in a portion of the gap section (50) and configured to support the multilayered wiring layer.