Wiring Structure Inducing Layer Atom Migration Control
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Solution Overview
Problem
The existing wiring structures in electronic circuits face reliability issues due to migration of constituent atoms between wirings, leading to insulation breakdown, especially under high temperature and humidity conditions, despite attempts to address this with etching and barrier films.
Innovation Solution
A wiring structure is developed with an inducing layer formed on the insulating film between multiple wirings, which diffuses the constituent atoms of the wirings, and a barrier film is applied to restrict diffusion, thereby controlling the migration and enhancing reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If etching and barrier films are used to prevent atom migration, then insulation breakdown is delayed, but the manufacturing process becomes more complex
Solution Approach 1:
An inducing layer is introduced as an intermediary component between the insulating film and the wirings. This layer mediates the interaction by providing a controlled diffusion path for constituent atoms, allowing them to migrate into the inducing layer rather than directly into adjacent wirings, thereby maintaining insulation resistance while simplifying the overall structure compared to multiple barrier films
Solution Approach 2:
The inducing layer changes the diffusion parameters by providing a material composition that allows controlled atom migration. By selecting specific materials for the inducing layer with appropriate diffusion characteristics, the migration behavior is modified to be gradual and controlled, delaying insulation breakdown without requiring complex barrier film structures
2Volume of moving object
If miniaturization of wiring structure is pursued, then device size and pricing are reduced, but reliability under HAST test deteriorates due to increased atom migration
Solution Approach 1:
The inducing layer serves as a mediator that becomes increasingly important in miniaturized structures where wiring spacing is reduced. It provides a controlled environment for atom migration, preventing direct interaction between closely spaced wirings and maintaining insulation resistance even when miniaturization increases the risk of atom migration
Solution Approach 2:
The inducing layer is specifically positioned in the regions between wirings where atom migration is most problematic. By applying this layer locally in critical areas, the patent addresses the reliability issue in miniaturized structures without adding complexity to the entire device, allowing selective control of migration paths where needed
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively prolongs the time to insulation breakdown by ensuring even and gradual migration, resulting in a wiring structure with high reliability and improved performance under HAST tests.
Implementation Method 1
an inducing layer, which is formed on the insulating film in a region between the plurality of wirings, constituent atoms of the wirings are diffused in the inducing layer
Data Source
AI summary
A wiring structure includes: an insulating film formed over a substrate; a plurality of wirings formed on the insulating film; and an inducing layer, which is formed on the insulating film in a region between the plurality of wirings, a constituent atoms of the wirings are diffused in the inducing layer.