Multi-Layered Wiring Interdiffusion Barrier
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing semiconductor devices with resin bumps face reliability issues due to interdiffusion of metallic elements at the interface between different wiring layers and potential corrosion from moisture or oxygen in the resin material, affecting the stability and conductivity of the wiring structure.
Innovation Solution
Incorporating an intermediate oxide or nitride film at the interface between conductive layers and forming a protective oxide or nitride film on the surface of the first conductive layer in contact with the resin bump to prevent interdiffusion and corrosion, using materials like titanium, nickel, chromium, tungsten for the first conductive layer and gold, platinum, or copper for the second conductive layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If different metallic materials are used for base wiring layer and surface wiring layer, then adhesion to resin and conductivity are improved, but interdiffusion of metallic elements occurs at the interface
Solution Approach 1:
An intermediate layer is introduced between the base wiring layer and surface wiring layer to prevent direct contact and interdiffusion of metallic elements. This intermediate layer acts as a barrier that maintains the benefits of different metallic materials while preventing their harmful interaction at the interface.
Solution Approach 2:
The wiring structure is divided into multiple segments: base wiring layer, intermediate layer, and surface wiring layer. This segmentation separates the functional requirements (adhesion, conductivity) from the harmful interaction (interdiffusion) by inserting a barrier segment between the different metallic materials.
2Strength
If metallic materials with good adhesion are used for base wiring layer, then adhesion to resin bump is improved, but corrosion and oxidation occur due to moisture and oxygen in resin
Solution Approach 1:
The intermediate layer serves as a protective barrier between the base wiring layer and the resin bump, preventing moisture and oxygen from reaching the metallic base wiring layer. This allows the use of metals with good adhesion properties while protecting them from corrosion and oxidation.
Solution Approach 2:
The intermediate layer is formed in advance before the resin bump is fully cured, creating a protective barrier that prevents subsequent corrosion from moisture and oxygen contained in the resin material.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances the reliability and stability of the semiconductor device by preventing interdiffusion and corrosion, ensuring consistent conductivity and extending the lifespan of the device.
Implementation Method 1
an intermediate layer as an oxide film or a nitride film of the first conductive layer is formed at the interface between the first conductive layer and the second conductive layer. The intermediate layer can act as a diffusion prevention layer to prevent interdiffusion of the constituting elements at the interface
Implementation Method 2
a base layer as the oxide film or nitride film of the first conductive layer is formed at the contact face between the first conductive layer and the resin bump. The base layer can protect the first conductive layer from the metallic corrosion due to the moisture of the resin bump, or from the chemical action of the oxygen or nitrogen from the resin bump
Data Source
AI summary
A semiconductor device having a multi-layered wiring layer includes a semiconductor substrate, an electrode that is provided on the semiconductor substrate, an insulating film that is provided on the semiconductor substrate, the insulating film having an aperture at least partly overlapping the electrode, a resin bump that is provided on the insulating film, and the wiring layer that is electrically connected to the electrode and that includes a first conductive layer, an intermediate layer, and a second conductive layer. The first conductive layer is formed on the electrode and on the resin bump, the intermediate layer is formed on the first conductive layer, and the second conductive layer formed on the intermediate layer.