Semiconductor Wiring Pattern Deactivation for Precise Via Overlay
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in achieving precise overlay control during the formation of via contacts and metal wirings, particularly in advanced semiconductor devices, where materials like ruthenium and tungsten are difficult to remove completely, leading to potential current leakage and structural integrity issues.
Innovation Solution
A resistivity conversion process, such as plasma oxidation or ion implantation, is applied to convert portions of conductive patterns into high-resistance materials, effectively deactivating them without physical removal, thereby improving overlay control and reducing the need for additional dummy filling.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If physical removal methods are used to eliminate unnecessary conductive portions, then complete removal can be achieved, but overlay control precision deteriorates and process complexity increases
Solution Approach 1:
The patent changes the physical-chemical parameter of the conductive material by converting it from a conductive state to a high-resistance insulating state through oxidation. This parameter change allows the material to be deactivated without physical removal, thereby maintaining overlay control precision while simplifying the manufacturing process. The oxidation process uses plasma treatment to transform the electrical properties of the conductive material in situ.
Solution Approach 2:
The patent replaces mechanical/physical removal methods with a chemical transformation process. Instead of physically removing conductive material through etching or abrasion, the invention uses plasma oxidation to chemically transform the material into a high-resistance state. This substitution eliminates the need for precise mechanical removal while achieving the same functional outcome of deactivating unnecessary conductive portions.
2Ease of manufacture
If conductive materials like ruthenium and tungsten are used, then wiring layer formation can be achieved, but complete removal becomes difficult leading to current leakage
Solution Approach 1:
The patent applies plasma oxidation to change the electrical parameter of ruthenium and tungsten materials from conductive to high-resistance insulating state. This parameter transformation allows complete deactivation of conductive portions that would otherwise be difficult to remove, preventing current leakage while maintaining the ease of wiring layer formation using these advanced materials.
Solution Approach 2:
The patent converts the harmful effect of residual conductive material (which causes current leakage) into a beneficial high-resistance insulating layer through oxidation. The same materials that are difficult to remove physically (ruthenium and tungsten) are transformed into useful insulating barriers, turning the removal difficulty into an advantage for preventing current leakage.
3Stability of the object's composition
If additional dummy filling is performed to maintain structural integrity, then structural stability can be maintained, but manufacturing process complexity increases
Solution Approach 1:
The patent gives the oxidation process multiple functions: it simultaneously deactivates unnecessary conductive portions, maintains structural integrity, and eliminates the need for separate dummy filling operations. By making the oxidation process multi-functional, the invention maintains structural stability while reducing overall manufacturing process complexity.
Solution Approach 2:
The patent merges the functions of conductive material deactivation and structural integrity maintenance into a single oxidation process step. Instead of requiring separate operations for deactivation and structural support (such as dummy filling), the invention combines these functions, thereby maintaining structural stability while simplifying the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances the precision of semiconductor manufacturing by ensuring complete deactivation of unnecessary conductive portions, reducing current leakage and structural stress, while simplifying the manufacturing process and increasing process margins.
Implementation Method 1
A resistivity conversion process, such as plasma oxidation or ion implantation, is applied to convert portions of conductive patterns into high-resistance materials
Implementation Method 2
A resistivity conversion process, such as plasma oxidation or ion implantation, is applied to convert portions of conductive patterns into high-resistance materials
Data Source
AI summary
In a method of manufacturing a semiconductor device, a conductive pattern is formed in a surface region of a dielectric layer, a mask pattern including an opening over the conductive pattern is formed over the dielectric layer, a part of the conductive pattern is converted into a high-resistant part having a higher resistivity than the conductive pattern before the converting through the opening, and the mask pattern is removed.